www.DataSheet4U.com
FQB9N30 / FQI9N30
May 2000
QFET
FQB9N30 / FQI9N30
300V N-Channel MOSFET
General Description
These...
www.DataSheet4U.com
FQB9N30 / FQI9N30
May 2000
QFET
FQB9N30 / FQI9N30
300V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply.
TM
Features
9.0A, 300V, RDS(on) = 0.45Ω @VGS = 10 V Low gate charge ( typical 17 nC) Low Crss ( typical 16 pF) Fast switching 100% avalanche tested Improved dv/dt capability
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D2-PAK
FQB Series
G D S
I2-PAK
FQI Series
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S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQB9N30 / FQI9N30 300 9.0 5.7 36 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) *
420 9.0 9.8 4.5 3.13 98 0.78 -55 to +150 300
TJ, TSTG TL
Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead te...