AOD419

www.DataSheet4U.com AOD419 P-Channel Enhancement Mode Field Effect Transistor General Description The AOD419 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Standard Product AOD419 is Pb-free (meets ROHS & Sony 259 specifications). AOD419L is a Green Product ordering option. AOD419 and AOD419L are electrically identical. TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Features VDS (V) = -40V (V GS = -10V) ID = -20A RDS(ON) < 40mΩ (VGS = -10V) RDS(ON) < 65mΩ (VGS = -4.5V) Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current C Avalanche Current Repetitive avalanche energy L=0.3mH TC=25°C Power Dissipation B C Maximum -40 ±20 -20 -18 -60 -20 60 50 25 2.5 1.6 -55 to 175 Units V V A A mJ W W °C TA=25°C G TA=100°C ID IDM IAR EAR PD PDSM TJ, TSTG TC=100°C TA=25°C TA=70°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 16.7 40 2.5 Max 25 50 3 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AOD419 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Con...