SPDT High Power UltraCMOS
www.DataSheet4U.com
Product Specification
PE4283
Product Description
The PE4283 RF Switch is designed to cover a broad...
Description
www.DataSheet4U.com
Product Specification
PE4283
Product Description
The PE4283 RF Switch is designed to cover a broad range of applications from DC through 4000 MHz. This reflective switch integrates on-board CMOS control logic with a low voltage CMOS-compatible control interface, and can be controlled using either single-pin or complementary control inputs. The PE4283 operates using a +3 volt power supply. The PE4283 SPDT High Power RF Switch is manufactured on Peregrine’s UltraCMOS™ process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of conventional CMOS. Figure 1. Functional Diagram
RFC
SPDT High Power UltraCMOS™ DC – 4.0 GHz RF Switch Features Single-pin or complementary CMOS logic control inputs
1.5 kV ESD tolerance Low insertion loss: 0.65 dB at
1000 MHz, 0.70 dB at 2500 MHz
RFC-RF1/RF2 isolation of 33.5 dB at
1000 MHz, 21.5 dB at 2500 MHz
RF1-RF2 isolation of 37.5 dB at
1000 MHz, 22 dB at 2500 MHz
Typical input 1 dB compression point
of +32 dBm
Ultra-small SC-70 package
Figure 2. Package Type SC-70
RF1 RF2
6-lead SC-70
CMOS Control Driver
V1
V2
Table 1. Electrical Specifications @ +25 °C, VDD = 3 V (ZS = ZL = 50 Ω)
Parameter
Operation Frequency Insertion Loss
1
Conditions
DC - 4000 1000 MHz 2500 MHz 1000 MHz 2500 MHz 1000 MHz 2500 MHz 1000 MHz 2500 MHz 50% CTRL to 0.1 dB of final value, 1 GHz 50% CTRL to 25 dB isolation, 1 GHz 1000 ...
Similar Datasheet