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PE4283

Peregrine Semiconductor

SPDT High Power UltraCMOS

www.DataSheet4U.com Product Specification PE4283 Product Description The PE4283 RF Switch is designed to cover a broad...


Peregrine Semiconductor

PE4283

File Download Download PE4283 Datasheet


Description
www.DataSheet4U.com Product Specification PE4283 Product Description The PE4283 RF Switch is designed to cover a broad range of applications from DC through 4000 MHz. This reflective switch integrates on-board CMOS control logic with a low voltage CMOS-compatible control interface, and can be controlled using either single-pin or complementary control inputs. The PE4283 operates using a +3 volt power supply. The PE4283 SPDT High Power RF Switch is manufactured on Peregrine’s UltraCMOS™ process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of conventional CMOS. Figure 1. Functional Diagram RFC SPDT High Power UltraCMOS™ DC – 4.0 GHz RF Switch Features Single-pin or complementary CMOS logic control inputs 1.5 kV ESD tolerance Low insertion loss: 0.65 dB at 1000 MHz, 0.70 dB at 2500 MHz RFC-RF1/RF2 isolation of 33.5 dB at 1000 MHz, 21.5 dB at 2500 MHz RF1-RF2 isolation of 37.5 dB at 1000 MHz, 22 dB at 2500 MHz Typical input 1 dB compression point of +32 dBm Ultra-small SC-70 package Figure 2. Package Type SC-70 RF1 RF2 6-lead SC-70 CMOS Control Driver V1 V2 Table 1. Electrical Specifications @ +25 °C, VDD = 3 V (ZS = ZL = 50 Ω) Parameter Operation Frequency Insertion Loss 1 Conditions DC - 4000 1000 MHz 2500 MHz 1000 MHz 2500 MHz 1000 MHz 2500 MHz 1000 MHz 2500 MHz 50% CTRL to 0.1 dB of final value, 1 GHz 50% CTRL to 25 dB isolation, 1 GHz 1000 ...




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