SPDT UltraCMOS RF Switch
Product Description
The PE4239 UltraCMOS® RF switch is designed to cover a broad range of applications from DC through 3...
Description
Product Description
The PE4239 UltraCMOS® RF switch is designed to cover a broad range of applications from DC through 3.0 GHz. This reflective switch integrates on-board CMOS control logic with a low voltage CMOS-compatible control interface, and can be controlled using either single-pin or complementary control inputs. Using a nominal +3V power supply voltage, a typical input 1 dB compression point of +25 dBm can be achieved.
The PE4239 UltraCMOS RF switch is manufactured on pSemi’s UltraCMOS process, a patented variation of silicon-oninsulator (SOI) technology on a sapphire substrate, offering the
Figure 1. Functional Diagram
RFC
RF1
RF2
Product Specification
PE4239
SPDT UltraCMOS® RF Switch
Features Single-pin or complementary CMOS
logic control inputs +3.0V power supply needed for single-
pin control mode Low insertion loss: 0.7 dB at 1.0 GHz,
0.9 dB at 2.0 GHz Isolation of 32 dB at 1.0 GHz, 23 dB at
2.0 GHz Typical input 1 dB compression point of
+25 dBm Ultra-small 6-lead SC-70 package
Figure 2. Package Type SC-70
6-lead SC-70
CMOS Control Driver
CTRL CTRL or VDD
Table 1. Electrical Specifications @ +25 °C, VDD = 3V (ZS = ZL = 50Ω)
Parameter
Conditions
Minimum
Operation Frequency1
DC
Insertion Loss
1000 MHz 2000 MHz
Isolation
1000 MHz 2000 MHz
30 21
Return Loss
1000 MHz 2000 MHz
18 16
‘ON’ Switching Time
50% CTRL to 0.1 dB of final value, 1 GHz
Typical
0.7 0.9 32 23 20 18 300
Maximum
3000
0.85 1.05
Units
MHz
dB dB dB dB dB dB
ns...
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