DatasheetsPDF.com

PE4125 Dataheets PDF



Part Number PE4125
Manufacturers Peregrine Semiconductor
Logo Peregrine Semiconductor
Description High Linearity Quad MOSFET Mixer
Datasheet PE4125 DatasheetPE4125 Datasheet (PDF)

www.DataSheet4U.com Product Specification PE4125 Product Description The PE4125 is a high linearity, passive Quad MOSFET Mixer for GSM 800 & Cellular Base Station Receivers and exhibits high dynamic range performance over a broad LO drive range up to 20 dBm. This mixer integrates passive matching networks to provide single-ended interfaces for the RF and LO ports, eliminating the need for external RF baluns or matching networks. The PE4125 is optimized for frequency down-conversion using high-.

  PE4125   PE4125



Document
www.DataSheet4U.com Product Specification PE4125 Product Description The PE4125 is a high linearity, passive Quad MOSFET Mixer for GSM 800 & Cellular Base Station Receivers and exhibits high dynamic range performance over a broad LO drive range up to 20 dBm. This mixer integrates passive matching networks to provide single-ended interfaces for the RF and LO ports, eliminating the need for external RF baluns or matching networks. The PE4125 is optimized for frequency down-conversion using high-side LO injection for GSM 800 & Cellular Base Station applications, and is also suitable for use in up-conversion applications. The PE4125 is manufactured on Peregrine’s UltraCMOS™ process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of conventional CMOS. Figure 1. Functional Diagram High Linearity Quad MOSFET Mixer for GSM 800 & Cellular BTS Features • Integrated, single-ended RF & LO interfaces • High linearity: IIP3 > +32 dBm, 820 - 920 MHz (+17 dBm LO) • Low conversion loss: 6.9 dB (+17 dBm LO) • High isolation: typical LO-IF at 43 dB, LO-RF at 31 dB • Designed for low-side LO injection Figure 2. Package Type 8-lead TSSOP LO RF PE4125 IF Table 1. AC and DC Electrical Specifications @ +25 °C (ZS = ZL = 50 Ω) Parameter Frequency Range: LO RF IF1 Conversion Loss2 Isolation: LO-RF LO-IF Input IP3 Input 1 dB Compression Notes: 30 38 30 Minimum 890 820 -- Typical --70 7.0 31.5 40 32 22 Maximum 990 920 -7.4 Units MHz MHz MHz dB dB dB dBm dBm 1. An IF frequency of 70 MHz is a nominal frequency. The IF frequency can be specified by the user as long as the RF and LO frequencies are within the specified maximum and minimum. 2. Conversion Loss includes loss of IF transformer (M/A COM ETC1-1-13, nominal loss 0.7dB at 70 MHz). *Test conditions unless otherwise noted: IF = 70 MHz, LO input drive = 17 dBm, RF input drive = 3 dBm. Document No. 70-0044-05 │ www.psemi.com ©2006 Peregrine Semiconductor Corp. All rights reserved. Page 1 of 8 PE4125 Product Specification Figure 3. Pin Configuration (Top View) Table 3. Absolute Maximum Ratings Symbol Parameter/Conditions Storage temperature range Operating temperature range LO input power RF input power ESD Sensitive Device Min -65 -40 Max 150 85 20 12 250 Units °C °C dBm dBm V LO GND RF 1 2 3 8 7 6 5 GND IF1 TST TOP PLO IF2 GND PRF VESD GND 4 PE4125 Table 2. Pin Descriptions Pin No. 1 Pin Name LO LO Input Description Absolute Maximum Ratings are those values listed in the above table. Exceeding these values may cause permanent device damage. Functional operation should be restricted to the limits in the DC Electrical Specifications table. Exposure to absolute maximum ratings for extended periods may affect device reliability. Electrostatic Discharge (ESD) Precautions When handling this UltraCMOS™ device, observe the same precautions that you would use with other ESD-sensitive devices. Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to avoid exceeding the rating specified. Latch-Up Avoidance 2 GND Ground connection for Mixer. Traces should be physically short and connect immediately to ground plane for best performance. RF Input Ground. Ground. IF differential output IF differential output Ground. 3 4 5 6 7 8 RF GND GND IF2 IF1 GND Unlike conventional CMOS devices, UltraCMOS™ devices are immune to latch-up. ©2006 Peregrine Semiconductor Corp. All rights reserved. Page 2 of 8 Document No. 70-0044-05 │ UltraCMOS™ RFIC Solutions PE4125 Product Specification Evaluation Kit Figure 4. Evaluation Board Layout Peregrine Specification 101/0054 Table 4. Bill of Materials Reference T2 U1 (Not Labeled) R1 J1, J2, J3 Value/Description M/A Com ETC1-1-13 PE4125 Mixer 0Ω SMA Connector Pin1 Applications Support If you have a problem with your evaluation kit or if you have applications questions, please contact applications support: E-Mail: [email protected] (fastest response) Phone: (858) 731-9400 Figure 5. Evaluation Board Schematic Diagram LO LO GND GND T2 IF1 IF2 GND IF RF RF GND PE4125 T2, M/A-Com E-Series RF 1:1 Transformer ETC1-1-13 Figure 6. Evaluation Board Testing Block Diagram, 2-Tone Setup 4125 PA 3 dB Sig Gen LO Eval Board IF 3 dB RF 3 dB Spectrum Analyzer Sig Gen 6 dB Hybrid Tee 6 dB Sig Gen Document No. 70-0044-05 │ www.psemi.com ©2006 Peregrine Semiconductor Corp. All rights reserved. Page 3 of 8 PE4125 Product Specification Typical Performance Plots (LO=17 dBm, RF=3 dBm, IF=70 MHz) Figure 7. Conversion Loss vs. Frequency 0 Figure 8. Input 1dB Compression vs. Frequency 25 -2 20 1dB Compression (dBm) Conversion Loss (dB) -4 15 -40 C 25 C 85 C -6 10 1dB Compression Measured at LO=14dBm 5 -8 -40 C 25 C 85 C -10 800 825 850 875 Frequency (MHz) 900 925 950 0 820 840 860 880 900 920 Frequency (MHz) Figure 9. Input IP3 vs. Frequency .


PE4124 PE4125 PE4126


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)