TSHF5210

www.DataSheet4U.com TSHF5210 Vishay Semiconductors High Speed Infrared Emitting Diode in T-1¾ Package Description TSHF5210 is a high speed infrared emitting diode in GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. TSHF5210 combines high speed with high radiant power at wavelength of 890 nm. Features High modulation bandwidth Extra high radiant power and radiant intensity 94 8390 Low forward voltage Suitable for high pulse current operation Standard package T-1¾ (∅ 5 mm) Angle of half intensity ϕ = ± 10° Peak wavelength λp = 890 nm High reliability Good spectral matching to Si photodetectors Lead (Pb)-free component Component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC e2 Applications Infrared high speed remote control and free air data transmission systems with high modulation frequencies or high data transmission rate requirements. TSHF5210 is ideal for the design of transmission systems according to IrDA requirements and for carrier frequency based systems (e.g. ASK / FSK - coded, 450 kHz or 1.3 MHz). Parts Table Part TSHF5210 Remarks MOQ: 4000 pcs Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Reverse Voltage Forward Current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/ Ambient t ≤ 5 sec, 2 mm from case tp/T = 0.5, tp = 100 µs tp...