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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP80N03CLE,NP80N03DLE,NP80N03ELE NP80N03KLE
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
These products are N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER NP80N03CLE NP80N03DLE PACKAGE TO-220AB TO-262 TO-263 (MP-25ZJ) TO-263 (MP-25ZK)
FEATURES
• Channel Temperature 175 degree rated • Super Low On-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID = 40 A) • Low Ciss : Ciss = 2600 pF TYP. • Built-in Gate Protection Diode
5
NP80N03ELE NP80N03KLE
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC)
Note1 Note2
VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg
30 ±20 ±80 ±320 1.8 120 175 –55 to +175 50 / 40 / 9 2.5 / 160 / 400
V V A A W W °C °C A mJ (TO-262)
Drain Current (Pulse)
Total Power Dissipation (TA = 25°C) Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note3 Note3
IAS EAS
Notes 1. Calculated constant current according to MAX. allowable channel temperature. 2. PW ≤ 10 µs, Duty cycle ≤ 1% 3. Starting Tch = 25°C, RG = 25 Ω , VGS = 20 → 0 V (see Figure 4.)
(TO-263)
THERMAL RESISTANCE
Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 1.25 83.3 °C/W °C/W
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Document No. D14032EJ4V0DS00 (4th edition) Date Published December 2002 NS CP(K) Printed in Japan
The mark 5 shows major revised points.
1999, 2000
NP80N03CLE,NP80N03DLE,NP80N03ELE,NP80N03KLE
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate to Source Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(th) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge 1 Total Gate Charge 2 Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG1 QG2 QGS QGD VF(S-D) trr Qrr VDD = 24 V, VGS = 10 V, ID = 80 A VDD = 24 V VGS = 5 V ID = 80 A IF = 80 A, VGS = 0 V IF = 80 A, VGS = 0 V di/dt = 100 A/µs TEST CONDITIONS VDS = 30 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = VGS, ID = 250 µA VDS = 10 V, ID = 40 A VGS = 10 V, ID = 40 A VGS = 5 V, ID = 40 A VGS = 4.5 V, ID = 40 A VDS = 25 V VGS = 0 V f = 1 MHz VDD = 15 V, ID = 40 A VGS = 10 V RG = 1 Ω 1.5 20 2.0 41 5.3 6.8 7.5 2600 590 270 20 12 60 14 48 28 10 14 1.0 34 22 7.0 9.0 11 3900 890 490 44 31 120 35 72 42 MIN. TYP. MAX. 10 ±10 2.5 UNIT
µA µA
V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC nC V ns nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V 50 Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG
VGS RL VDD VDS
90% 90% 10% 10%
VGS
Wave Form
0
10%
VGS
90%
BVDSS IAS ID VDD VDS
VGS 0 τ τ = 1 µs Duty Cycle ≤ 1%
VDS
VDS
Wave Form
0 td(on) ton
tr
td(off) toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50 Ω
RL VDD
2
Data Sheet D14032EJ4V0DS
NP80N03CLE,NP80N03DLE,NP80N03ELE,NP80N03KLE
TYPICAL CHARACTERISTICS (T A = 25°C)
Figure1. DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 140 Figure2. TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
100 80 60 40 20 0
120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 200
0
25
50
75
100 125 150 175 200
TC - Case Temperature - ˚C
TC - Case Temperature - ˚C Figure4. SINGLE AVALANCHE ENERGY DERATING FACTOR 450
Figure3. FORWARD BIAS SAFE OPERATING AREA
EAS- Single Avalanche Energy - mJ
1000 ID(pulse)
PW
400 350 300 250 200
400 mJ
ID - Drain Current - A
100
R tV (a
) (on DS GS
d ite ) Lim10 V =
ID(DC)
DC Po Lim wer ite Dis sip d ati on
10 0µ s 1m s
=1
0µ
s
10
IAS = 9 A 40 A 50 A 160 mJ
150 100 50 2.5 mJ 0 25 50 75 100 125 150 175
1 TC = 25˚C Single pulse 0.1 0.1 VDS 1 10 - Drain to Source Voltage - V 100
Starting Tch - Starting Channel Temperature - ˚C
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000
rth(t) - Transient Thermal Resistance - ˚C/W
100
Rth(ch-A) = 83.3˚C/W
10
1
Rth(ch-C) = 1.25˚C/W
0.1 Single pulse 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 100 1000
PW - Pulse Width - s
Data Sheet D14032EJ4V0DS
3
NP80N03CLE,NP80N03DLE,NP80N03ELE,NP80N03KLE
Figure6. FORWARD TRANSFER CHARACTERISTICS 1000 Pulsed
ID - Drain Current - A
Figure7. DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 400 .