DatasheetsPDF.com

NE677M04 Dataheets PDF



Part Number NE677M04
Manufacturers CEL
Logo CEL
Description NECs MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
Datasheet NE677M04 DatasheetNE677M04 Datasheet (PDF)

www.DataSheet4U.com NEC's MEDIUM POWER NPN SILICON HIGH FREQUENCY NE677M04 TRANSISTOR FEATURES • • • • HIGH GAIN BANDWIDTH: fT = 15 GHz HIGH OUTPUT POWER: P-1dB = 15 dBm at 1.8 GHz HIGH LINEAR GAIN: GL = 15.5 dB at 1.8 GHz NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance +0.40-0.05 2 +0.30 2.05±0.1 1.25±0.1 3 2.0±0.1 R54 1.25 0.650.65 0.650.65 DESCRIPTION NEC's NE677M04 is fabricated using NEC's HFT3 wafer process. W.

  NE677M04   NE677M04


Document
www.DataSheet4U.com NEC's MEDIUM POWER NPN SILICON HIGH FREQUENCY NE677M04 TRANSISTOR FEATURES • • • • HIGH GAIN BANDWIDTH: fT = 15 GHz HIGH OUTPUT POWER: P-1dB = 15 dBm at 1.8 GHz HIGH LINEAR GAIN: GL = 15.5 dB at 1.8 GHz NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance +0.40-0.05 2 +0.30 2.05±0.1 1.25±0.1 3 2.0±0.1 R54 1.25 0.650.65 0.650.65 DESCRIPTION NEC's NE677M04 is fabricated using NEC's HFT3 wafer process. With a transition frequency of 15 GHz, the NE677M04 is usable in applications from 100 MHz to 3 GHz. The NE677M04 provides P1dB of 15 dBm, even with low voltage and low current, making this device an excellent choice for the driver stage for mobile or fixed wireless applications. NEC's NE677M04 is housed in NEC's new low profile/flat lead style "M04" package 1 +0.30-0.05 (leads 1, 3 and ,4) 0.59±0.05 +0.11-0.05 MAX 100 100 75 dBm dB dBm dB % dB GHz pF 10.0 120 15.0 15.5 16.0 13.5 50 1.7 15 0.22 0.50 2.5 150 +0.1 PIN CONNECTIONS 1. Emitter 2. Collector 3. Emitter 4. Base NE677M04 M04 2SC5751 UNITS nA nA MIN TYP +0.01 ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE EIAJ3 REGISTRATION NUMBER SYMBOLS ICBO PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 5V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current1 Gain at VCE = 3 V, IC = 20 mA Output Power at 1 dB compression point at VCE = 2.8 V, ICQ = 8 mA, f = 1.8 GHz, Pin = 1 dBm Linear Gain at VCE = 2.8 V, ICQ = 8 mA, f = 1.8 GHz, Pin = -10 dBm Maximum Available Gain4 at VCE = 3 V, IC = 20 mA, f = 2 GHz Insertion Power Gain at VCE = 3 V, IC = 20 mA, f = 2 GHz Collector Efficiency at VCE = 2.8 V, ICQ = 8 mA, f = 1.8 GHz, Pin = 1 dBm Noise Figure at VCE = 3 V, IC = 5 mA, f = 2 GHz, Zs =ZOPT Gain Bandwidth at VCE = 3 V, IC = 20 mA, f = 2 GHz Reverse Transfer Capacitance2 at VCB = 3 V, IC = 0, f = 1 MHz DC IEBO hFE P1dB GL RF MAG |S21E|2 ηc NF fT Cre Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 2. Collector to Base capacitance measured by capacitance meter(automatic balance bridge method) when emitter pin is connected to the guard pin of capacitance meter. 3. Electronic Industrail Association of Japan |S21| 4. MAG = |S12| (K ± K 2- 1 ). California Eastern Laboratories 4 1.30 NE677M04 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS VCBO VCEO VEBO IC PT TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation2 Junction Temperature Storage Temperature UNITS V V V mA mW °C °C RATINGS 9.0 6.0 2.0 50 205 150 -65 to +150 ORDERING INFORMATION PART NUMBER NE677M04-T2 QUANTITY 3k pcs./reel THERMAL RESISTANCE SYMBOLS Rth j-a PARAMETERS Thermal Resistance from Junction to Ambient UNITS °C/W RATINGS 600 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Mounted on a 1.08cm2 x 1.0 mm thick glass epoxy PCB. Note: 1. Mounted on a 1.08cm2 x 1.0 mm thick glass epoxy PCB. TYPICAL PERFORMANCE CURVES (TA = 25 °C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Mounted on Glass Epoxy PCB 2 (1.08 cm x 1.0 mm (t) ) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Reverse Transfer Capacitance Cre (pF) 300 0.5 f = 1MHz Total Power Dissipation Pout (mW) 250 200 150 100 50 0.4 0.3 0.2 0.1 0 25 50 75 100 125 150 0 1 2 3 4 5 6 Ambient Temperature TA (ºC) Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 60 500 µA 400 µA IB: 50 µA step 50 40 30 20 100 µA 10 IB : 50 µ µ A 500 A 0 1 2 3 4 5 6 7 8 300 µA DC CURRENT GAIN vs. COLLECTOR CURRENT 000 VCE = 3 V Collector Current IC (mA) DC Current Gain (hFE) 200 µA 100 010 0.1 1 10 100 Collector to Emitter Voltage VCE (V) Collector Current IC (mA) NE677M04 TYPICAL PERFORMANCE CURVES (TA = 25 °C) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 15 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Insertion Power Gain |S21e|2, (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 35 MSG MAG 25 20 15 10 5 0 0.1 |S21e|2 Gain Bandwidth Product fT (GHz) VCE = 3 V f = 2 GHz VCE = 3 V Ic = 20 mA 10 5 0 1 10 100 1 10 Collector Current IC (mA) Frequency f (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2, (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) VCE = 3 V f = 1 GHz 20 MSG MAG Insertion Power Gain |S21e|2, (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 25 25 VCE = 3 V f = 2 GHz 20 |S21e|2 15 MSG 15 MAG 10 10 |S21e|2 5 5 0 1 10 100 0 1 10 100 Collector Current IC (mA) Collector Current IC (mA) INSERTION POWER GAIN, MAG vs. COLLECTOR CURRENT NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 8 VCE = 3 V f = 2 GHz 16 Ga 12 Insertion Power Gain |S21e|2, (dB) Maximum Available Power.


NE67483B NE677M04 NE678M04


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)