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NEC's MEDIUM POWER NPN SILICON HIGH FREQUENCY NE677M04 TRANSISTOR
FEATURES
• • • • HIGH GAIN BANDWIDTH: fT = 15 GHz HIGH OUTPUT POWER: P-1dB = 15 dBm at 1.8 GHz HIGH LINEAR GAIN: GL = 15.5 dB at 1.8 GHz NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance
+0.40-0.05 2
+0.30
2.05±0.1 1.25±0.1
3
2.0±0.1
R54
1.25 0.650.65
0.650.65
DESCRIPTION
NEC's NE677M04 is fabricated using NEC's HFT3 wafer process. With a transition frequency of 15 GHz, the NE677M04 is usable in applications from 100 MHz to 3 GHz. The NE677M04 provides P1dB of 15 dBm, even with low voltage and low current, making this device an excellent choice for the driver stage for mobile or fixed wireless applications. NEC's NE677M04 is housed in NEC's new low profile/flat lead style "M04" package
1
+0.30-0.05 (leads 1, 3 and ,4)
0.59±0.05 +0.11-0.05
MAX 100 100 75 dBm dB dBm dB % dB GHz pF 10.0 120 15.0 15.5 16.0 13.5 50 1.7 15 0.22 0.50 2.5 150 +0.1 PIN CONNECTIONS 1. Emitter 2. Collector 3. Emitter 4. Base NE677M04 M04 2SC5751 UNITS nA nA MIN TYP
+0.01
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER PACKAGE OUTLINE EIAJ3 REGISTRATION NUMBER SYMBOLS ICBO PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 5V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current1 Gain at VCE = 3 V, IC = 20 mA Output Power at 1 dB compression point at VCE = 2.8 V, ICQ = 8 mA, f = 1.8 GHz, Pin = 1 dBm Linear Gain at VCE = 2.8 V, ICQ = 8 mA, f = 1.8 GHz, Pin = -10 dBm Maximum Available Gain4 at VCE = 3 V, IC = 20 mA, f = 2 GHz Insertion Power Gain at VCE = 3 V, IC = 20 mA, f = 2 GHz Collector Efficiency at VCE = 2.8 V, ICQ = 8 mA, f = 1.8 GHz, Pin = 1 dBm Noise Figure at VCE = 3 V, IC = 5 mA, f = 2 GHz, Zs =ZOPT Gain Bandwidth at VCE = 3 V, IC = 20 mA, f = 2 GHz Reverse Transfer Capacitance2 at VCB = 3 V, IC = 0, f = 1 MHz
DC
IEBO hFE P1dB GL
RF
MAG |S21E|2 ηc NF fT Cre
Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 2. Collector to Base capacitance measured by capacitance meter(automatic balance bridge method) when emitter pin is connected to the guard pin of capacitance meter. 3. Electronic Industrail Association of Japan
|S21| 4. MAG = |S12|
(K ±
K 2- 1
).
California Eastern Laboratories
4
1.30
NE677M04 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS VCBO VCEO VEBO IC PT TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation2 Junction Temperature Storage Temperature UNITS V V V mA mW °C °C RATINGS 9.0 6.0 2.0 50 205 150 -65 to +150
ORDERING INFORMATION
PART NUMBER NE677M04-T2 QUANTITY 3k pcs./reel
THERMAL RESISTANCE
SYMBOLS Rth j-a PARAMETERS Thermal Resistance from Junction to Ambient UNITS °C/W RATINGS 600
Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Mounted on a 1.08cm2 x 1.0 mm thick glass epoxy PCB.
Note: 1. Mounted on a 1.08cm2 x 1.0 mm thick glass epoxy PCB.
TYPICAL PERFORMANCE CURVES (TA = 25 °C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
Mounted on Glass Epoxy PCB 2 (1.08 cm x 1.0 mm (t) )
REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE
Reverse Transfer Capacitance Cre (pF)
300
0.5
f = 1MHz
Total Power Dissipation Pout (mW)
250 200 150 100 50
0.4
0.3
0.2
0.1
0
25
50
75
100
125
150
0
1
2
3
4
5
6
Ambient Temperature TA (ºC)
Collector to Base Voltage VCB (V)
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
60 500 µA 400 µA IB: 50 µA step 50 40 30 20 100 µA 10 IB : 50 µ µ A 500 A 0 1 2 3 4 5 6 7 8 300 µA
DC CURRENT GAIN vs. COLLECTOR CURRENT
000
VCE = 3 V
Collector Current IC (mA)
DC Current Gain (hFE)
200 µA
100
010 0.1
1
10
100
Collector to Emitter Voltage VCE (V)
Collector Current IC (mA)
NE677M04 TYPICAL PERFORMANCE CURVES (TA = 25 °C)
GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT
15
INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY
Insertion Power Gain |S21e|2, (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB)
35 MSG MAG 25 20 15 10 5 0 0.1 |S21e|2
Gain Bandwidth Product fT (GHz)
VCE = 3 V f = 2 GHz
VCE = 3 V Ic = 20 mA
10
5
0 1 10 100
1
10
Collector Current IC (mA)
Frequency f (mA)
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2, (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB)
VCE = 3 V f = 1 GHz 20
MSG
MAG
Insertion Power Gain |S21e|2, (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB)
25
25 VCE = 3 V f = 2 GHz 20
|S21e|2
15
MSG
15
MAG
10
10
|S21e|2
5
5
0 1 10 100
0 1
10
100
Collector Current IC (mA)
Collector Current IC (mA)
INSERTION POWER GAIN, MAG vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT
8 VCE = 3 V f = 2 GHz 16 Ga 12
Insertion Power Gain |S21e|2, (dB) Maximum Available Power.