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NE67483B Dataheets PDF



Part Number NE67483B
Manufacturers CEL
Logo CEL
Description (NE67400 / NE67483B) NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET
Datasheet NE67483B DatasheetNE67483B Datasheet (PDF)

www.DataSheet4U.com NEC's L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET FEATURES • LOW NOISE FIGURE: NF = 1.4 dB TYP at f = at 12 GHz Noise Figure, NF (dB) NE67400 NE67483B NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY 24 VDS = 3 V ID = 10 mA 20 • GATE WIDTH: WG = 280 µm • GATE LENGTH: LG = 0.3 µm 3.0 GA 16 2.0 12 DESCRIPTION NEC's NE674 is a L to Ku Band low noise GaAs MESFET. This device features a low noise figure with high associated gain, employing a recessed 0.3 micron gate.

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www.DataSheet4U.com NEC's L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET FEATURES • LOW NOISE FIGURE: NF = 1.4 dB TYP at f = at 12 GHz Noise Figure, NF (dB) NE67400 NE67483B NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY 24 VDS = 3 V ID = 10 mA 20 • GATE WIDTH: WG = 280 µm • GATE LENGTH: LG = 0.3 µm 3.0 GA 16 2.0 12 DESCRIPTION NEC's NE674 is a L to Ku Band low noise GaAs MESFET. This device features a low noise figure with high associated gain, employing a recessed 0.3 micron gate and triple epitaxial technology. The active area of the chip is covered with SiD2 and Si3N4 for scratch protection and surface stability. This device is suitable for both amplifier and oscillator applications. This device is housed in a solder sealed hermetic, metal ceramic package for high reliability in space applications. 1.0 8 NF 0 1 2 4 6 8 10 14 20 30 4 Frequency, f (GHz) ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS NF PARAMETERS AND CONDITIONS Noise Figure at VDS = 3 V, ID = 10 mA, f = 4 GHz f = 12 GHz Associated Gain at VDS = 3 V ID = 10 mA, f = 4 GHz f = 12 GHz Output Power at 1 dB Gain Compression Point, f = 12 GHz, VDS = 3 V, IDS = 30 mA Saturated Drain Current at VDS = 3 V, VGS = 0 V Gate to Source Cut Off Voltage at VDS = 3 V, ID = 100 µA Transconductance at VDS = 3 V, ID = 10 mA Gate to Source Leakage Current at VGS = -5 V Thermal Resistance (Channel-to-Case) NE67400 NE67483B UNITS dB dB dB dB MIN NE67400 NE67483B TYP 0.6 1.4 14.0 10.0 MAX 1.6 GA 8.5 P1dB dBm mA V mS µA °C/W °C/W 20 -0.5 20 14.5 40 -1.1 50 1.0 120 -3.5 100 10 190 450 IDSS VGS(OFF) gm IGSO RTH (CH-C) California Eastern Laboratories Associated Gain, GA, (dB) • HIGH ASSOCIATED GAIN: GA = 10 dB TYP at f = 12 GHz NE67400, NE67483B ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS VDS VGD IDS TCH TSTG PT PARAMETERS Drain to Source Voltage Gate to Drain Voltage Drain Current Channel Temperature Storage Temperature Total Power Dissipation NE67483B NE67400 UNITS V V mA °C °C mW mW RATINGS 5.0 –6.0 IDSS 175 -65 to +175 270 400 TYPICAL NOISE PARAMETERS (TA = 25°C) VDS = 3 V, IDS = 10 mA (NE67483B) FREQ. (GHz) 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 NFOPT (dB) 0.55 0.58 0.60 0.68 0.76 0.85 0.93 1.03 1.15 1.26 1.40 1.55 1.70 1.84 2.04 2.18 2.35 GA (dB) 17.0 15.2 14.0 13.2 12.6 12.0 11.5 11.0 10.7 10.3 10.0 9.6 9.2 9.0 8.6 8.3 8.0 ΓOPT MAG 0.81 0.75 0.70 0.67 0.65 0.64 0.64 0.64 0.64 0.64 0.63 0.62 0.60 0.57 0.53 0.46 0.38 ANG 37 53 69 83 97 111 123 136 148 161 173 -173 -159 -145 -129 -113 -95 Rn/50 0.57 0.51 0.44 0.37 0.31 0.25 0.19 0.14 0.10 0.06 0.05 0.05 0.08 0.15 0.23 0.34 0.44 Note: 1. Operation in excess of any one of these conditions may result in permanent damage. RECOMMENDED OPERATING CONDITIONS (TA = 25°C) SYMBOLS VDS ID PIN PARAMETERS Drain to Source Voltage Drain Current Input Power UNITS MIN V mA dBm TYP MAX 3 10 4 30 15 TYPICAL PERFORMANCE CURVES (TA = 25°C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 400 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VGS = 0 V Total Power Dissipation, PT (mW) 300 NE 674 Drain Current, IDS (mA) 40 -0.2 V 30 NE 00 200 67 48 3B 20 -0.4 V 100 10 -0.6 V 0 50 100 150 200 0 1 2 3 4 5 Ambient Temperature, TA (°C) Drain to Source Voltage, VDS (V) NE67400, NE67483B TYPICAL PERFORMANCE CURVES (TA = 25°C) DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 50 VDS = 3 V Drain Current, IDS (mA) 40 30 20 10 0 -2.0 -1.0 0 Gate to Source Voltage, VGS (V) TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25°C) NE67483B VDS = 3 V, ID = 10 mA Start 500 MHz, Stop 18 GHZ, Step 500 MHz 0.5 S11 1.0 2.0 S22 1.0 0.5 2.0 5 0 4 0 0 5 0 4 3 Marker 1 : 2 GHz 2 : 4 GHz 3 : 8 GHz 4 : 12 GHz 5 : 16 GHz -0.5 -1.0 1 -2.0 1 2 3 2 -0.5 -1.0 -2.0 NE67400, NE67483B NE67483B VDS = 3 V, IDS = 10 mA FREQUENCY MHz 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 6500 7000 7500 8000 8500 9000 9500 10000 10500 11000 11500 12000 12500 13000 13500 14000 14500 15000 15500 16000 16500 17000 17500 18000 MAG 0.992 0.961 0.985 0.960 0.930 0.934 0.885 0.855 0.876 0.830 0.818 0.817 0.786 0.781 0.772 0.763 0.752 0.734 0.716 0.695 0.685 0.672 0.661 0.649 0.633 0.614 0.594 0.567 0.543 0.536 0.512 0.489 0.465 0.451 0.418 0.387 S11 ANG -11.4 -21.7 -32.1 -42.5 -53.1 -61.7 -70.6 -81.8 -89.4 -97.3 -106.0 -111.4 -120.2 -126.4 -133.0 -140.2 -145.6 -152.9 -158.2 -164.0 -169.5 -174.5 179.4 174.4 169.1 162.3 156.9 151.1 143.5 138.2 131.0 123.7 116.9 108.3 100.7 91.9 MAG 3.091 3.045 3.029 2.941 2.914 2.795 2.662 2.568 2.537 2.436 2.333 2.251 2.132 2.100 2.028 1.988 1.929 1.854 1.815 1.758 1.714 1.666 1.657 1.624 1.597 1.577 1.542 1.500 1.483 1.462 1.455 1.451 1.433 1.441 1.408 1.404 S21 ANG 169.6 159.3 150.2 141.1 130.6 123.1 113.5 104.4 95.5 88.7 80.9 74.2 66.2 59.2 52.6 44.9 39.3 31.6 25.8 20.0 14.1 7.7 1.2 -4.5 -11.4 -17.3 -24.1 -30.0 -36.1 -41.9 -47.9 -54.1 -60.5 -67.5 -74.6 -81.6 MAG 0.011 0.022 0.032 0.041 0.049 0.056 0.062 0.068 0.071 0.076 0.077 0.080 0.080 0.081 .


NE67400 NE67483B NE677M04


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