NE67300

www.DataSheet4U.com LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY FEATURES VERY HIGH fMAX: 100 GHz Optimum Noise Figure, NFOPT (dB) NE67300 NE67383 NE67383 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA 5 GA 4 16 20 3 12 LG = 0.3 µm, WG = 280 µm N+ CONTACT LAYER (Triple Epitaxial Technology) PROVEN RELIABILITY AND STABILITY SPACE QUALIFIED 2 8 1 NFOPT 4 0 0 1 2 4 8 12 20 30 DESCRIPTION The NE673 features a low noise figure and high associated gain through K-band by employing a recessed 0.3 micron gate and triple epitaxial technology for industrial and space applications. The device is available as a chip (NE67300). The chip's gate and channel are glassivated with a thin layer of Si3N4 for mechanical protection only. The NE673 is in a rugged hermetically sealed metal/ceramic stripline package selected for NFOPT performance at 12.0 GHz. NEC's stringent quality assurance and test procedures assure the highest reliability and performance. Frequency, f (GHz) ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS NFOPT GA P1dB IDS VP gM IGS RTH (CH-A) PARAMETERS AND CONDITIONS Optimum Noise Figure at VDS = 3 V, IDS = 10 mA, f =12 GHz Associated Gain at Optimum Noise Figure at VDS = 3 V, IDS = 10 mA, f = 12 GHz Output Power at 1 dB Compression Point at VDS = 3 V, IDS = 30 mA, f = 12 GHz Saturated Drain Current at VDS = 3 V, VGS = 0 Pinch-off Voltage at VDS = 3 V, IDS = 0.1 mA ...