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High Voltage Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, High dv/dt
Preliminary Data Sheet
VDSS
ID25 3A 3A
RDS(on) 4.5 Ω 4.0 Ω
IXTA/IXTP 3N120 IXTA/IXTP 3N110
1200 V 1100 V
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C 3N120 3N110 3N120 3N110
Maximum Ratings 1200 1100 1200 1100 ±20 ±30 3 12 3 20 700 5 150 -55 to +150 150 -55 to +150 V V V V
D (TAB)
TO-220 (IXTP)
V V A A A mJ mJ V/ns W °C °C °C °C Features
l l l
G
DS
TO-263 (IXTA)
G S
D (TAB)
G = Gate S = Source
D = Drain TAB = Drain
1.6 mm (0.063 in) from case for 10 s Mounting torque (TO-220) TO-220 TO-263
300
1.13/10 Nm/lb.in. 4 2 g g
l
International standard packages Low RDS (on) Rated for unclamped Inductive load Switching (UIS) Molding epoxies meet UL 94 V-0 flammability classification
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 3N120 3N110 1200 1100 2.5 4.5 ± 100 TJ = 25°C TJ = 125°C 3N120 3N110 25 1 4.5 4.0 V V V nA µA mA Ω Ω
Advantages
l l l
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 1 mA VDS = VGS, ID = 250 µA VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Note 1
Easy to mount Space savings High power density
© 2001 IXYS All rights reserved
98844A (11/01)
IXTA/IXTP 3N120 IXTA/IXTP 3N110
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1.5 2.2 1050 1300 VGS = 0 V, VDS = 25 V, f = 1 MHz 100 125 25 17 VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 4.7 Ω (External), 15 32 18 39 VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 9 22 0.8 (TO-220) 0.25 50 S pF pF pF ns ns ns ns nC nC nC K/W K/W
Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain Bottom Side
TO-220 (IXTP) Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 10 V; ID = 0.5 • ID25, Note 1
Source-Drain Diode Symbol IS ISM VSD t rr Test Conditions VGS = 0 V
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 3 12 1.5 700 A A V ns TO-263 (IXTA) Outline
Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Note 1 IF = IS, -di/dt = 100 A/µs, VR = 100 V
Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1. 2. 3. 4.
Gate Drain Source Drain Bottom Side
Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R
Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 7.11 9.65 6.86 2.54 14.61 2.29 1.02 1.27 0 0.46 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.13 10.29 8.13 BSC 15.88 2.79 1.40 1.78 0.38 0.74
Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .018 .190 .110 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .015 .029
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025
IXTA/IXTP 3N120 IXTA/IXTP 3N110
5
TJ = 25OC
4.0
VGS = 9V 8V 7V 6V
3.5
5V
4
3.0
TJ = 125OC VGS = 9V 8V 7V 6V
ID - Amperes
ID - Amperes
3 2 1 0
2.5 2.0 1.5 1.0
5V
4V
0.5
4V
0.0 0 2 4 6 8 10 12 14 16 18 20 0 3 6 9 12 15 18 21 24 27 30
VDS - Volts
VDS - Volts
Fig.1 Output Characteristics @ Tj = 25°C
2.50
VGS = 10V
Fig. 2 Output Characteristics @ Tj = 125°C
2.8
VGS = 10V TJ = 125OC
2.25
RDS(ON) - Normalized
2.5
2.00 1.75 1.50 1.25 1.00 0.75 0 1 2 3 4 5
TJ = 25OC
RDS(ON) - Normalized
2.2 1.9 1.6
ID = 3A
ID =1.5A
1.3 1.0 25
50
75
100
125
150
ID - Amperes
TJ - Degrees C
Fig. 3 RDS(on) vs. Drain Current
4.0 3.5 3.0
IXT_3N120 IXT_3N110
Fig. 4 Temperature Dependence of Drain to Source Resistance
3.0 2.5
ID - Amperes
ID - Amperes
2.5 2.0 1.5 1.0 0.5 0.0
2.0 1.5
TJ = 125oC
1.0
TJ = 25oC
0.5 0.0 3.5
-50
-25
0
25
50
75
100 125 150
4.0
4.5
5.0
5.5
6.0
T C - Degrees C
VGS - Volts
Fig. 5 Drain Current vs. Case Temperature
Fig. 6
Drain Current vs Gate Source Voltage
© 2001 IXYS All rights reserved
IXTA/IXTP 3N120 IXTA/IXTP 3N110
12
Ciss
f = 1MHz
10
VGS - Volts
8 6 4 2 0 0 10 20 30 40 50 60
Capacitance - pF
VDS = 600V ID = 1.5A
1000
Coss
100
Crss
10 0 5 10 15 20 25 30 35 40
Gate Charge - nC
VDS - Volts
Fig. 7 Gate Charge Characteristic Curve
5
VGS = 0V
Fig. 8 Capacitance Curves
4
ID - Amperes
3
TJ = 125OC TJ = 25OC
2
1
0
0.2
0.4
0.6
0.8
1.0
VSD - Volts
Fig. 9 Drain Current vs Drain to Source Voltage
1.00
R(th)JC - K/W
0.10
Single Pulse
0.01
0.00 10-4
10-3
10-2
10-1
100
101
Pulse Width - Seconds
Fig.10 Transient Thermal Impedance
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the followi.