Power MOSFET
PolarHTTM Power MOSFET
IXTA 36N30P IXTP 36N30P IXTQ 36N30P
N-Channel Enhancement Mode Avalanche Rated
V= DSS
ID25 = ≤...
Description
PolarHTTM Power MOSFET
IXTA 36N30P IXTP 36N30P IXTQ 36N30P
N-Channel Enhancement Mode Avalanche Rated
V= DSS
ID25 = ≤ RDS(on)
300 V 36 A
110 mΩ
Symbol
Test Conditions
TO-263 (IXTA) Maximum Ratings
VDSS V
DGR
VGS VGSM
ID25 IDM I
AR
EAR EAS
dv/dt
PD TJ TJM Tstg
T L
TSOLD Md Weight
TJ = 25° C to 150° C
T J
=
25°
C
to
150°
C;
R GS
=
1
MΩ
Continuous Transient
TC = 25° C TC = 25° C, pulse width limited by TJM
T C
= 25° C
TC = 25° C TC = 25° C
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 10 Ω
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s
Mounting torque (TO-3P / TO-220)
TO-3P TO-220 TO-263
300
V
300
V
±30
V
±40
V
36
A
90
A
36
A
30
mJ
1.0
J
10
V/ns
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
5.5
g
4
g
3
g
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
Characteristic Values Min. Typ. Max.
300
V
VGS(th)
VDS = VGS, ID = 250µA
3.0
5.5 V
IGSS
VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125° C
1 µA 200 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
92 110 m Ω
G S
D(TAB)
TO-220 (IXTP)
G DS TO-3P (IXTQ)
D(TAB)
G D S
G = Gate S = Source
D(TAB)
D = Drain TAB = Drain
Features
l International standard packages l Unclamped Inductive Switching (UIS)
rated l Low package inductance
- easy to drive and to protect
Advantages
l Easy to mount l Sp...
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