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Advance Technical Data
HiPerFASTTM IGBT
C2-Class High Speed IGBTs
IXGH 60N60C2 IXGT 60N60C2
VCES IC25 VCE(sat) tfi typ
= 600 V = 75 A = 2.5 V = 35 ns
Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C (limited by leads) TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ ≤ 600V TC = 25°C
Maximum Ratings 600 600 ±20 ±30 75 60 300 ICM = 100 480 -55 ... +150 150 -55 ... +150 300 V V V V A A A A W °C °C °C °C
TO-247 AD (IXGH)
C (TAB) G C E
TO-268 (IXGT)
G E
C (TAB)
G = Gate, E = Emitter,
C = Collector, TAB = Collector
Features
z z
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (TO-247)
1.13/10Nm/lb.in. TO-247 AD TO-268 6 4 g g
z z
Very high frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity
Applications
z
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 3.0 TJ = 25°C TJ = 150°C 5.0 50 1 ±100 TJ = 25°C TJ = 125°C 2.1 1.8 2.5 V µA mA nA
z z
z z z
VGE(th) ICES IGES VCE(sat)
IC
= 250 µA, VCE = VGE
PFC circuits Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers
VCE = VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = 50 A, VGE = 15 V
Advantages
z
V V
z
High power density Very fast switching speeds for high frequency applications
© 2003 IXYS All rights reserved
DS99043A(09/03)
IXGH 60N60C2 IXGT 60N60C2
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 40 58 3900 VCE = 25 V, VGE = 0 V, f = 1 MHz 280 97 146 IC = 50 A, VGE = 15 V, VCE = 0.5 VCES 28 50 18 Inductive load, TJ = 25°C IC = 50 A, VGE = 15 V VCE = 400 V, RG = Roff = 2 Ω 25 95 35 0.48 18 Inductive load, TJ = 125°C IC = 50 A, VGE = 15 V VCE = 400 V, RG = Roff = 2 Ω 25 0.45 130 80 1.2 150 S
∅P
TO-247 AD Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = 50 A; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
pF pF pF nC nC nC ns ns ns ns 0.8 mJ ns ns mJ ns ns mJ 0.26 K/W TO-268 Outline
e
Dim.
Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
(TO-247)
0.25
K/W
Min. Recommended Footprint (Dimensions in inches and mm)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXGH 60N60C2 IXGT 60N60C2
Fig. 1. Output Characteristics @ 25 Deg. C
1 00 90 80 VG E = 15V 13V 11 V 9V 200 1 75 1 50
Fig. 2. Extended Output Characteristics @ 25 deg. C
VG E = 15V 13V 11 V
9V
I C - Amperes
I C - Amperes
70 60 50 40 30 20 1 0 0 0.5 1 1 .5 2 2.5
7V
1 25 1 00 75 50
7V
5V
25 0
5V 1 1 .5 2 2.5 3 3.5 4 4.5
3
3.5
V CE - Volts
V CE - Volts
Fig. 3. Output Characteristics @ 125 Deg. C
1 00 90 80 70 VG E = 15V 13V 11 V 9V 1 .1 1 .2
Fig. 4. Temperature Dependence of V CE(sat)
VC E (sat) - Normalized
VG E = 15V 1 0.9 0.8 0.7
I C = 100A
I C - Amperes
7V
60 50 40 30 20 1 0 0 0.5 1 1 .5 2 2.5 3 3.5
I C = 50A
5V
I C = 25A 0.6 0.5 25 50 75 1 00 1 25 1 50
V CE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter voltage
5 4.5 4 T J = 25º C 200 1 75 1 50
Fig. 6. Input Admittance
VCE - Volts
3.5 3 2.5 2 1 .5 1 5 6 7 8 9 1 0 1 1 1 2 1 3 1 4 1 5
I C - Amperes
1 25 1 00 75 50 25 0 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 T J = 125º C 25º C -40º C
I C = 100A
50A 25A
V GE - Volts
© 2003 IXYS All rights reserved
V GE - Volts
IXGH 60N60C2 IXGT 60N60C2
Fig. 7. Transconductance
1 00 90 80 T J = -40º C 25º C 125º C
Fig. 8. Dependence of Eoff on RG
6 5 TJ = 125º C VGE = 15V VCE = 400V I C = 100A
E off - milliJoules
g f s - Siemens
70 60 50 40 30 20 1 0 0 0 25
4 I C = 75A 3 2 1 0 I C = 50A I C = 25A
50
75
1 00
1 25
1 50
1 75
200
2
4
6
8
1 0
1 2
1 4
1 6
I C - Amperes
R G - Ohms
Fig. 9. Dependence of Eoff on IC
5 R G = 2 Ohms R G = 10 Ohms - - - - 4 5
Fig. 10. Dependence of Eoff on Temperature
R G = 2 Ohms R G= 10 Ohms - - - - 4
I C = 100A
E off - MilliJoules
3
T J = 125 ºC
E off - milliJoules
VG E = 15V VC E = 400V
VG E = 15V VC E = 400V I C = 75A
3
2 T J = 25 ºC 1
2 I C = 50A 1 I C = 25A 25 50 75 1 00 1 25
0 20 30 40 50 60 70 80 90 1 00
.