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IXGT60N60C2 Dataheets PDF



Part Number IXGT60N60C2
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description HiPerFASTTM IGBT C2-Class High Speed IGBTs
Datasheet IXGT60N60C2 DatasheetIXGT60N60C2 Datasheet (PDF)

www.DataSheet4U.com Advance Technical Data HiPerFASTTM IGBT C2-Class High Speed IGBTs IXGH 60N60C2 IXGT 60N60C2 VCES IC25 VCE(sat) tfi typ = 600 V = 75 A = 2.5 V = 35 ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C (limited by leads) TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ ≤ 600V TC = 25°C Maximum Ratings 600 600 ±20 ±30.

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www.DataSheet4U.com Advance Technical Data HiPerFASTTM IGBT C2-Class High Speed IGBTs IXGH 60N60C2 IXGT 60N60C2 VCES IC25 VCE(sat) tfi typ = 600 V = 75 A = 2.5 V = 35 ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C (limited by leads) TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ ≤ 600V TC = 25°C Maximum Ratings 600 600 ±20 ±30 75 60 300 ICM = 100 480 -55 ... +150 150 -55 ... +150 300 V V V V A A A A W °C °C °C °C TO-247 AD (IXGH) C (TAB) G C E TO-268 (IXGT) G E C (TAB) G = Gate, E = Emitter, C = Collector, TAB = Collector Features z z Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (TO-247) 1.13/10Nm/lb.in. TO-247 AD TO-268 6 4 g g z z Very high frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity Applications z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 3.0 TJ = 25°C TJ = 150°C 5.0 50 1 ±100 TJ = 25°C TJ = 125°C 2.1 1.8 2.5 V µA mA nA z z z z z VGE(th) ICES IGES VCE(sat) IC = 250 µA, VCE = VGE PFC circuits Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers VCE = VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = 50 A, VGE = 15 V Advantages z V V z High power density Very fast switching speeds for high frequency applications © 2003 IXYS All rights reserved DS99043A(09/03) IXGH 60N60C2 IXGT 60N60C2 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 40 58 3900 VCE = 25 V, VGE = 0 V, f = 1 MHz 280 97 146 IC = 50 A, VGE = 15 V, VCE = 0.5 VCES 28 50 18 Inductive load, TJ = 25°C IC = 50 A, VGE = 15 V VCE = 400 V, RG = Roff = 2 Ω 25 95 35 0.48 18 Inductive load, TJ = 125°C IC = 50 A, VGE = 15 V VCE = 400 V, RG = Roff = 2 Ω 25 0.45 130 80 1.2 150 S ∅P TO-247 AD Outline gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK IC = 50 A; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % pF pF pF nC nC nC ns ns ns ns 0.8 mJ ns ns mJ ns ns mJ 0.26 K/W TO-268 Outline e Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC (TO-247) 0.25 K/W Min. Recommended Footprint (Dimensions in inches and mm) IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXGH 60N60C2 IXGT 60N60C2 Fig. 1. Output Characteristics @ 25 Deg. C 1 00 90 80 VG E = 15V 13V 11 V 9V 200 1 75 1 50 Fig. 2. Extended Output Characteristics @ 25 deg. C VG E = 15V 13V 11 V 9V I C - Amperes I C - Amperes 70 60 50 40 30 20 1 0 0 0.5 1 1 .5 2 2.5 7V 1 25 1 00 75 50 7V 5V 25 0 5V 1 1 .5 2 2.5 3 3.5 4 4.5 3 3.5 V CE - Volts V CE - Volts Fig. 3. Output Characteristics @ 125 Deg. C 1 00 90 80 70 VG E = 15V 13V 11 V 9V 1 .1 1 .2 Fig. 4. Temperature Dependence of V CE(sat) VC E (sat) - Normalized VG E = 15V 1 0.9 0.8 0.7 I C = 100A I C - Amperes 7V 60 50 40 30 20 1 0 0 0.5 1 1 .5 2 2.5 3 3.5 I C = 50A 5V I C = 25A 0.6 0.5 25 50 75 1 00 1 25 1 50 V CE - Volts TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter voltage 5 4.5 4 T J = 25º C 200 1 75 1 50 Fig. 6. Input Admittance VCE - Volts 3.5 3 2.5 2 1 .5 1 5 6 7 8 9 1 0 1 1 1 2 1 3 1 4 1 5 I C - Amperes 1 25 1 00 75 50 25 0 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 T J = 125º C 25º C -40º C I C = 100A 50A 25A V GE - Volts © 2003 IXYS All rights reserved V GE - Volts IXGH 60N60C2 IXGT 60N60C2 Fig. 7. Transconductance 1 00 90 80 T J = -40º C 25º C 125º C Fig. 8. Dependence of Eoff on RG 6 5 TJ = 125º C VGE = 15V VCE = 400V I C = 100A E off - milliJoules g f s - Siemens 70 60 50 40 30 20 1 0 0 0 25 4 I C = 75A 3 2 1 0 I C = 50A I C = 25A 50 75 1 00 1 25 1 50 1 75 200 2 4 6 8 1 0 1 2 1 4 1 6 I C - Amperes R G - Ohms Fig. 9. Dependence of Eoff on IC 5 R G = 2 Ohms R G = 10 Ohms - - - - 4 5 Fig. 10. Dependence of Eoff on Temperature R G = 2 Ohms R G= 10 Ohms - - - - 4 I C = 100A E off - MilliJoules 3 T J = 125 ºC E off - milliJoules VG E = 15V VC E = 400V VG E = 15V VC E = 400V I C = 75A 3 2 T J = 25 ºC 1 2 I C = 50A 1 I C = 25A 25 50 75 1 00 1 25 0 20 30 40 50 60 70 80 90 1 00 .


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