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DN1509 N-Channel Depletion-Mode Vertical DMOS FET
Features
► ► ► ► ► ► High input impedance Low inp...
www.DataSheet4U.com
DN1509 N-Channel Depletion-Mode Vertical DMOS FET
Features
► ► ► ► ► ► High input impedance Low input capacitance Fast switching speeds Low ON-resistance Free from secondary breakdown Low input and output leakages
General Description
The Supertex DN1509 is suitable for high voltage transient protection for LDO in automobile applications during “load dump” conditions. This low threshold, depletion-mode (normally-on)
transistor utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar
transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Applications
► ► ► ► ► ► Normally-on switches Battery operated systems Converters Linear amplifiers Constant current sources Telecom
Ordering Information
Device DN1509 Package Option TO-243AA (SOT-89) DN1509N8-G
Product marking for TO-243AA:
BVDSX/BVDGX 90V
RDS(ON) (max) 6.0Ω
IDSS (typ) 540mA
where
DN5A = 2-week alpha date code
-G indicates package is RoHS compliant (‘Gre...