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Technische Information / Technical Information
Dioden-Module
Diode-Modules
DD 400 S 65 K1
Höchstzulässige Werte / Maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral der Diode
I2t - value, Diode
Isolations-Prüfspannung
insulation test voltage
Teilentladungs Aussetzspannung
partial discharge extinction voltage
Tvj=125°C
Tvj=25°C
Tvj=-40°C
tP = 1 ms
VR = 0V, tp = 10ms, TVj = 125°C
RMS, f = 50 Hz, t = 1 min.
RMS, f = 50 Hz, QPD typ. 10pC (acc. To IEC 1287)
VCES
IF
IFRM
I2t
VISOL
VISOL
6500
6300
5800
400
800
87
10,2
5,1
V
A
A
k A2s
kV
kV
Charakteristische Werte / Characteristic values
Durchlaßspannung
forward voltage
Sperrstrom
reverse current
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Abschaltenergie pro Puls
reverse recovery energy
Modulinduktivität
stray inductance module
Modulleitungswiderstand, Anschlüsse - Chip
module lead resistance, terminals - chip
IF = 400A, Tvj = 25°C
IF = 400A, Tvj = 125°C
VR = 6300V, Tvj = 25°C
VR = 6500V, Tvj = 125°C
IF = 400A, - diF/dt = 1400A/µs
VR = 3600V, Tvj = 25°C
VR = 3600V, Tvj = 125°C
IF = 400A, - diF/dt = 1400A/µs
VR = 3600V, Tvj = 25°C
VR = 3600V, Tvj = 125°C
IF = 400A, - diF/dt = 1400A/µs
VR = 3600V, Tvj = 25°C
VR = 3600V, Tvj = 125°C
pro Zweig / per arm
pro Zweig / per arm
min. typ. max.
VF
3,0 3,8 4,6
V
3,9 4,7
V
IR - 0,15 - mA
- 15 - mA
IRM - 540 - A
- 660 -
A
Qr - 360 - µC
- 700 - µC
Erec
LsCE
-
-
-
RCC´+EE´
-
440
1050
25
-
-
-
0,37 -
mJ
mJ
nH
mΩ
prepared by: Dr. Oliver Schilling
approved by: Dr. Schütze 2002-07-05
date of publication: 2002-07-05
revision/Status: Series 1
1 DD 400 S65 K1 (final 1).xls
