BAR63V-04W

www.DataSheet4U.com VISHAY BAR63V-04W Vishay Semiconductors RF PIN Diodes - Dual, Series in SOT-323 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-04W was designed for RF signal tuning. As a function of the forward bias current the forward resistance (rf) can be adjusted to less than 1 Ω while the low reverse capacitance offers a high isolation. Typical applications for this PIN Diodes are wireless, mobile and TV-systems. 2 1 1 2 18379 3 3 Features Low forward resistance Very small reverse capacitance Applications For frequency up to 3 GHz RF-signal tuning Mobile , wireless and TV-Applications Mechanical Data Case: Plastic case (SOT-323) Weight: approx. 6.0 mg Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box Parts Table Part BAR63V-04W Ordering code BAR63V-04W-GS18 or BAR63V-04W-GS08 CW4 Marking Remarks Tape and Reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Reverse voltage Forward current Junction temperature Storage temperature range Test condition Symbol VR IF Tj Tstg Value 50 100 150 - 55 to + 150 Unit V mA °C °C Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Reverse voltage Reverse current Forward voltage Diode capacitance Test condition IR = 10 µA VR = 35 V IF = 100 mA f = 1 MHz, VR = 0 f = 1 MHz, VR = 5 V Symbol VR IR VF CD CD 0.28 0.23 0.3 Min 50 10 1.2 Typ. Max Unit V nA V pF pF Documen...