30SPA0553

www.DataSheet4U.com 27.0-32.0 GHz GaAs MMIC Power Amplifier September 2005 - Rev 01-Sep-05 30SPA0553 Chip Device Layout Features Ka-Band 2W Power Amplifier 22.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept (OIP3) 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 General Description Mimix Broadband's three stage 27.0-32.0 GHz GaAs MMIC power amplifier has a small signal gain of 22.0 dB with +33 dBm saturated output power. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-toPoint Radio, LMDS, SATCOM and VSAT applications. uc Units GHz dB dB dB dB dB dBm VDC VDC mA mA mA Min. 27.0 -1.2 - Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id1,2,3) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) Electrical Characteristics (Ambient Temperature T = 25 oC) Parameter Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21) Gain Flatness (ΔS21) Reverse Isolation (S12) Saturated Output Power (Psat) Drain Bias Voltage...