S29WS128N

www.DataSheet4U.com S29WSxxxN MirrorBit™ Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit (16/8/4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Data Sheet PRELIMINARY General Description The Spansion S29WS256/128/064N are MirrorbitTM Flash products fabricated on 110 nm process technology. These burst mode Flash devices are capable of performing simultaneous read and write operations with zero latency on two separate banks using separate data and address pins. They operate up to 80 MHz and use a single VCC of 1.7–1.95 volts that makes them ideal for today’s demanding wireless applications requiring higher density, better performance and lowered power consumption. Distinctive Characteristics „ „ „ „ „ „ „ „ Single 1.8 V read/program/erase (1.70–1.95 V) 110 nm MirrorBit™ Technology Simultaneous Read/Write operation with zero latency 32-word Write Buffer Sixteen-bank architecture consisting of 16/8/4 Mbit for WS256N/128N/064N, respectively Four 16 Kword sectors at both top and bottom of memory array 254/126/62 64 Kword sectors (WS256N/128N/ 064N) Programmable burst read modes — Linear for 32, 16 or 8 words linear read with or without wrap-around — Continuous sequential read mode „ „ „ „ SecSi™ (Secured Silicon) Sector region consisting of 128 words each for factory and customer 20-year data retention (typical) Cycling Endurance: 100,000 cycles per sector (typical) RDY output indicates data available to system „ „ „ „ Command set...