Power MOSFET
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HiPerFETTM Power MOSFETs Single Die MOSFET
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, ...
Description
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HiPerFETTM Power MOSFETs Single Die MOSFET
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
Preliminary data sheet
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TJ VISOL Md Weight 1.6 mm (0.63 in) from case for 10 s 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
IXFE 44N60
VDSS ID25
RDS(on)
= = =
600 V 41 A 130 mΩ
D
trr ≤ 250 ns
G S
S
Maximum Ratings 600 600 ±20 ±30 41 176 44 60 3 5 500 -55 ... +150 150 -55 ... +150 2500 3000 V V V V A A A mJ J V/ns W °C °C °C °C V~ V~
ISOPLUS 227TM (IXFE)
S G
S D
G = Gate S = Source
D = Drain
Either Source terminal at miniBLOC can be used as Main or Kelvin Source
Features Conforms to SOT-227B outline
Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) Low package inductance Fast intrinsic Rectifier
Applications DC-DC converters rated
Mounting torque Terminal connection torque
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 19 g
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25°C TJ = 125°C 4.5 ± 200 V V nA
Battery chargers Switched-mode and resonant-mode DC choppers Temperature and lighting controls
power supplie...
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