IXFE180N10

www.DataSheet4U.com HiPerFETTM Power MOSFET Single Die MOSFET Preliminary data sheet Symbol Test Conditions VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C Terminal (current limit) T C = 25 °C; Note 1 TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C IXFE 180N10 VDSS ID25 RDS(on) = 100 V = 176 A = 8 mΩ trr ≤ 250 ns Maximum Ratings 100 100 ± 20 ± 30 176 100 720 180 60 3 5 500 -55 ... +150 150 -55 ... +150 300 2500 3000 V V V V A A A A mJ J V/ns W °C °C °C °C V~ V~ ISOPLUS 227TM (IXFE) S G S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features Conforms to SOT-227B outline Encapsulating epoxy meets UL 94 V-0, flammability classification Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Mounting torque Terminal connection torque 1.5/13Nm/lb.in. 1.5/13Nm/lb.in. 19 g Fast intrinsic Rectifier Applications DC-DC converters Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS= 0 V, ID = 3mA VDS = VGS, ID = 8mA VGS= ±20V, VGS = 0V VDS= VDSS VGS= 0 V VGS = 10V, ID = IT Note 2 Min. 100 2 Characteristic Values Typ. Max. V...