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DATA SHEET
DSM8100-000: Mesa Beam Lead PIN Diode
Applications:
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Designed for switching applications
Features
Low capacitance Low resistance ● Fast switching ● Oxide–nitride passivated ● Durable construction ● High voltage
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Description
Skyworks’ Silicon Mesa Beam Lead PIN diode is surrounded by a glass frame for superior strength and electrical performance that surpasses the standard beam lead PINs. The DSM8100-000 is designed for low resistance, low capacitance and fast switching time. The oxide-nitride passivation layers provide reliable operation and stable junction parameters that provide complete sealing of the junction permitting use in assemblies with some degree of moisture sealing. A layer of glass provides increased mechanical strength. The DSM8100 is ideal for microstrip or stripline circuits and for circuits requiring high isolation from a series mounted diode such as broad band multi-throw switches, phase shifters, limiters, attenuators and modulators.
Absolute Maximum Ratings
Characteristic Operating temperature Storage temperature Power dissipation (derate linearly to zero @ 175 °C) Typical lead strength Value -65 °C to +150 °C -65 °C to +200 °C 250 mW 8 grams pull
Performance is guaranteed only under the conditions listed in the specifications table and is not guaranteed under the full range(s) described by the Absolute Maximum specifications. Exceeding any of the absolute maximum/minimum specifications may result in permanent damage to the device and will void the warranty.
CAUTION: Although this device is designed to be as robust as possible, Electrostatic Discharge (ESD) can damage this device. This device must be protected at all times from ESD. Static charges may easily produce potentials of several kilovolts on the human body or equipment, which can discharge without detection. Industry-standard ESD precautions must be employed at all times.
Mesa Beam Lead Diode Specifications
Part Number DSM8100-000 Voltage Breakdown @ IR 10 µA (V) Min. 60 Capacitance Total 10 V, 1 MHz (pF) Max. 0.025 Series Resistance (Ω) 10 mA,100 MHz Max. 3.5 CLT IF = 10 mA, IR = 6 mA (ns) Typ. 25 Outline Drawing Number 389-003
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 •
[email protected] • www.skyworksinc.com
200096 Rev. B • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • February 7, 2005
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DATA SHEET • DSM8100-000
Typical Performance Data
45 40 35 30 25 20 15 10 5 0 (10 mA) VR = 40 V 0 0.3 1 3 10 30 100 300 0 5 10 15 18 20 25 30
5
Attenuation (dB)
Mesa Beam Lead
Insertion Loss (dB)
10 Chip 15
Isolation (dB)
Conventional Beam Lead
0.75 0.60 0.45 0.30 0.15
20
Time (ns)
Frequency (GHz)
Switching Time Data
Typical Isolation and Insertion Loss Characteristics
100
20
RF Resistance (Ω)
10 20 30
Capacitance (pF)
15 0.06 0.05 0.04 0.03 0.02 0.01 0 1 MHz
10
1
Above 1 GHz 0.1 0.1 1 10 100
Reverse Voltage (V)
Forward.