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FDZ191P P-Channel 1.5V PowerTrenchTM WL-CSP MOSFET
October 2006
FDZ191P P-Channel 1.5V PowerTrenchTM WL-CSP MOSFET
-20V, -1A, 85mΩ Features General Description
Max rDS(on) = 85mΩ at VGS = -4.5V, ID = -1A Max rDS(on) = 123mΩ at VGS = -2.5V, ID = -1A Max rDS(on) = 200mΩ at VGS = -1.5V, ID = -1A Occupies only 1.5 mm2 of PCB area Less than 50% of the area of 2 x 2 BGA Ultra-thin package: less than 0.65 mm height when mounted to PCB RoHS Compliant
tm
Designed on Fairchild's advanced 1.5V PowerTrench process with state of the art "low pitch" WLCSP packaging process, the FDZ191P minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rDS(on). .
Application
Battery management Load switch Battery protection
PIN 1 S S D D S G
S
G
BOTTOM
TOP
D
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation TA = 25°C TA = 25°C (Note 1a) (Note 1b) TA = 25°C (Note 1a) Ratings -20 ±8 -3 -15 1.5 0.9 -55 to +150 Units V V A W °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 83 140 °C/W
Package Marking and Ordering Information
Device Marking 1 Device FDZ191P Package WL-CSP Reel Size 7’’ Tape Width 8mm Quantity 5000 units
©2006 Fairchild Semiconductor Corporation FDZ191P Rev.F (W)
1
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FDZ191P P-Channel 1.5V PowerTrenchTM WL-CSP MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250µA, VGS = 0V ID = -250µA, referenced to 25°C VDS = -16V, VGS = 0V VGS = ±8V, VDS = 0V -20 -12 -1 ±100 V mV/°C µA nA
On Characteristics
VGS(th) ∆VGS(th) ∆TJ rDS(on) ID(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = -250µA ID = -250µA, referenced to 25°C VGS = -4.5V, ID = -1A Drain to Source On Resistance VGS = -2.5V, ID = -1A VGS = -1.5V, ID = -1A VGS = -4.5V, ID = -1A TJ = 125°C On to State Drain Current Forward Transconductance VGS = -4.5V, VDS = -5V VDS = -5V, ID = -1A -10 7 -0.4 -0.6 2 67 85 140 87 85 123 200 123 A S mΩ -1.5 V mV/°C
Dynamic Characteristics
Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = -10V, VGS = 0V, f = 1MHz f = 1MHz 800 155 90 9 pF pF pF Ω
Switching Characteristics
td(on) tr td(off) tf Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge VGS = 0V to 10V VDD = -10V ID = -1A VDD = -10V, ID = -1A VGS = -4.5V, RGEN = 6Ω 11 10 50 30 9 1 2 20 20 80 48 13 ns ns ns ns nC nC nC
Drain-Source Diode Characteristics
IS VSD trr Qrr Maximum continuous Drain-Source Diode Forward Current Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = -1.1A (Note 2) -0.7 21 5 -1.1 -1.2 A V ns nC
IF = -1A, di/dt = 100A/µs
Notes: 1: RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board side of the solder ball, RθJB is defined for reference. For RθJC the thermal reference point for the case is defined as the top surface of the copper chip carrier. RθJC and RθJB are guaranteed by design while RθJA is determined by the user's board design. a. 83°C/W when mounted on a 1 in2 pad of 2 oz copper,1.5” X 1.5” X 0.062” thick PCB b. 140°C/W when mounted on a minimum pad of 2 oz copper
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
FDZ191P Rev.F (W)
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FDZ191P P-Channel 1.5V PowerTrenchTM WL-CSP MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
16
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
2.0
PULSE DURATION = 300µs DUTY CYCLE = 2.0%MAX VGS = -2.0V VGS = -4.5V VGS = -3.5V VGS = -2.5V VGS = -1.5V
14
-ID, DRAIN CURRENT (A)
1.8 1.6 1.4 1.2 1.0
VGS = -1.5V
PULSE DURATION = 300µs DUTY CYCLE = 2.0%MAX
12 10 8 6 4 2 0 0.0 0.5
VGS = -2.0V VGS = -2.5V
VGS = -3.5V
VGS = -4.5V
1.0 1.5 2.0 2.5 3.0 3.5 4.0 -VDS, DRAIN TO SOURCE VOLTAGE (V)
0.8
0
2
4 6 8 10 -ID, DRAIN CURRENT(A)
12
14
16
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage
240
rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ)
ID = - 0.5A
NORMALIZED DRAIN TO SOURCE ON-R.