PBSS5480X

www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS5480X 80 V, 4 A PNP low VCEsat (BISS) transistor Product specification Supersedes data of 2004 Jun 8 2004 Nov 08 Philips Semiconductors Product specification 80 V, 4 A PNP low VCEsat (BISS) transistor FEATURES High hFE and low VCEsat at high current operation High collector current IC: 4 A High efficiency leading to less heat generation. APPLICATIONS Medium power peripheral drivers (e.g. fans and motors) Strobe flash units for digital still cameras and mobile phones Inverter applications (e.g. TFT displays) Power switch for LAN and ADSL systems Medium power DC-to-DC conversion Battery chargers. DESCRIPTION PNP low VCEsat (BISS) transistor in a SOT89 (SC-62) plastic package. NPN complement: PBSS4480X. MARKING TYPE NUMBER PBSS5480X Note 1. * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. MARKING CODE(1) *1Z 3 2 1 PBSS5480X QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 emitter collector base DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. −80 −4 −10 75 UNIT V A A mΩ 2 3 1 sym079 Fig.1 Simplified outline (SOT89) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS5480X SC-62 DESCRIPTION plastic surface mounted package; collector pad for good heat transfer; 3 leads VERSION SOT89 2004 Nov 08 2 Philips Semiconductors Product specification 80 V, 4...