MAAPGM0036

www.DataSheet4U.com RO-P-DS-3075 Preliminary Information 1.2-3.2 GHz 1.2W Power Amplifier MAAPGM0036 MAAPGM0036 Features ♦ 1.2 Watt Saturated Output Power Level ♦ Variable Drain Voltage (4-10V) Operation ♦ Self-Aligned MSAG® Process Primary Applications ♦ ♦ ♦ ♦ 2.5-2.7 GHz MMDS GPS Radar Telemetry APGM0036 YWWLLLL Description The MAAPGM0036 is a packaged, 2-stage, 1.2 W power amplifier with on-chip bias networks in a bolt down ceramic package, allowing easy assembly. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Each device is 100% RF tested to ensure performance compliance. The part is fabricated using M/A-COM’s GaAs Multifunction Self-Aligned Gate (MSAG®) MESFET Process. M/A-COM’s MSAG process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors and multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Pin Number 1 2 3 4 5 6 7 8 9 10 RF Designator No Connection VGG RF IN VGG No Connection No Connection VDD RF OUT VDD No Connection Maximum Operating Conditions 1 Parameter Input Power Drain Supply Voltage Gate Supply Voltage Quiescent Drain Current (No RF, 40% IDSS) Quiescent DC Power Dissipated (No RF) Junction Te...