MAAPGM0035S-DIE

www.DataSheet4U.com Amplifier, Power, S/C-Band, 1.6W 2.5-5.5 GHz Features ♦ ♦ ♦ ♦ MAAPGM0035S-DIE 903179 — Preliminary Information 1.6 Watt Saturated Output Power Level Variable Drain Voltage (4-10V) Operation MSAG Process On-Chip Bias Ladder Description The MAAPGM0035S-DIE is a 2-stage, 1.6 W power amplifier with onchip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. An on-chip bias ladder allows for fixed gate voltage or fixed small-signal drain current operation. Each device is 100% RF tested on wafer to ensure performance compliance. The part is fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAG®) Process. This process provides polyimide scratch protection. Primary Applications ♦ WLL ♦ MMDS ♦ SatCom Electrical Characteristics: TB = 40°C1, Z0 = 50 Ω, VDD = 8V, Idq= 600mA2, Pin = 20 dBm Parameter Bandwidth Output Power Power Added Efficiency 1-dB Compression Point Small Signal Gain Input VSWR Gate Current Drain Current Output Third Order Intercept Noise Figure 2nd Harmonic 3rd Harmonic 1. 2. TB = MMIC Base Temperature Adjust VGG between –6.5 and –3.5V to achieve specified Idq. Symbol f POUT PAE P1dB G VSWR IGG IDD OTOI NF 2f 3f Typical 2.5-5.5 32 34 31 17 1.5:1 < 10 < 850 42 7 -10 -20 mA mA dBm dB dBc dBc Units GHz dBm % dBm dB 1 M/A-COM Inc. and its affiliates reserve the ...