MAAPGM0030

www.DataSheet4U.com Amplifier, Power, 1W 5.0-9.0 GHz Features ♦ 1 Watt Saturated Output Power Level ♦ Variable Drain Voltage (4-10V) Operation ♦ MSAG™ Process 903239 — Preliminary Information MAAPGM0030 Primary Applications ♦ Multiple Band Point-to-Point Radio ♦ SatCom ♦ ISM Band APGM0030 YWWLLLL Description The MAAPGM0030 is a packaged, single stage, 1W power amplifier with on-chip bias networks in a bolt down ceramic package, allowing easy assembly. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Each device is 100% RF tested to ensure performance compliance. The part is fabricated using M/A-COM’s GaAs Multifunction Self-Aligned Gate (MSAG™) Process. M/A-COM’s MSAG™ process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors and multiple implant capability enabling power, lownoise, switch and digital FETs on a single chip. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Pin Number 1 2 3 4 5 6 7 8 9 10 RF Designator No Connection No Connection RF IN No Connection VGG No Connection No Connection RF OUT No Connection VDD Absolute Maximum Conditions 1 Parameter Input Power Drain Supply Voltage Gate Supply Voltage Quiescent Drain Current (No RF, 40% Idss) Quiescent DC Power Dissipated (No RF) Junction Temperat...