IXSK50N60BU1

www.DataSheet4U.com IGBT with Diode Short Circuit SOA Capability IXSK 50N60BU1 IXSX 50N60BU1 VCES IC25 VCE(sat) = 600 V = 75 A = 2.5 V PLUS247 (IXSX) Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C, limited by leads TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 W Clamped inductive load, L = 30 mH VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 22 W, non repetitive TC = 25°C Maximum Ratings C (TAB) 600 600 ±20 ±30 75 50 200 ICM = 100 @ 0.8 VCES 10 300 -55 ... +150 150 -55 ... +150 V V V V A A A A ms W °C °C °C Nm/lb.in. g °C G C E TO-264 AA (IXSK) G C E C = Collector, TAB = Collector G = Gate, E = Emitter, Mounting torque 0.9/6 10 300 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Features International standard package JEDEC TO-264 AA, and hole-less TO-247 package for clip mounting Guaranteed Short Circuit SOA capability High frequency IGBT and antiparallel FRED in one package Latest generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM Applications AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Advantages Space savings (two devices in...