IXKN75N60C

www.DataSheet4U.com CoolMOS Power MOSFET IXKN 75N60C N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET VDSS 600 V ID25 75 A RDS(on) 35 mΩ Preliminary MOSFET Symbol VDSS VGS ID25 ID90 dv/dt EAS EAR TC = 25°C TC = 90°C VDS < VDSS; IF ≤ 100A;diF/dt≤ 200A/µs TVJ = 150°C ID = 10 A; L = 36 mH; TC = 25°C ID = 20 A; L = 5 µH; TC = 25°C Conditions TVJ = 25°C to 150°C Maximum Ratings miniBLOC, SOT-227 B E72873 S 600 ±20 75 50 6 1.8 1 V V A A V/ns G S D G = Gate S = Source D = Drain J mJ Either source terminal at miniBLOC can be used as main or kelvin source Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 30 3.5 0.1 35 mΩ 5.5 V Features ● RDSon VGSth IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf VF RthJC VGS = 10 V; ID = ID90 VDS = 20 V; ID = 5 mA; VDS = VDSS; VGS = 0 V; TVJ = 25°C TVJ = 125°C VGS = ±20 V; VDS = 0 V VGS= 10 V; VDS = 350 V; ID = 100 A 0.05 mA mA ● miniBLOC package - Electrically isolated copper base - Low coupling capacitance to the heatsink for reduced EMI - High power dissipation due to AlN ceramic substrate - International standard package SOT-227 - Easy screw assembly fast CoolMOS power MOSFET - 2nd generation - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness Enhanced total power density 200 nA 440 112 246 30 95 100 10 0.9 1.1 nC nC nC ns ns ns ns V ● VGS= 10 V; VDS = 380 V; ID = 50 A; ...