IXKN40N60C

www.DataSheet4U.com Advanced Technical Information CoolMOS Power MOSFET IXKN 40N60C N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET VDSS 600 V ID25 40 A RDS(on) 70 mW Symbol VDSS VGS ID25 ID90 EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Conditions TJ = 25°C to 150°C Maximum Ratings 600 ±20 V V miniBLOC, SOT-227 B E72873 S G TC = 25°C TC = 90°C ID = 20 A, L = 5 µH, TVJ = 25°C, repetitive ID = 10 A, L = 36 mH, TVJ = 25°C, non repetitive VDS £ VDSS, IS = 47 A, diS/dt = 100 A/µs, TJ = TJM TC = 25°C 40 27 1 1.8 6 290 -40 ... +150 150 -40 ... +150 A A mJ J D S V/ns W °C °C °C V~ G = Gate S = Source D = Drain Either source terminal at miniBLOC can be used as main or kelvin source 50/60 Hz, RMS IISOL £ 1 mA Mounting torque Terminal connetion torque (M4) 2500 Features q 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. miniBLOC package - Electrically isolated copper base - Low coupling capacitance to the heatsink for reduced EMI - High power dissipation due to AlN ceramic substrate - International standard package SOT-227 - Easy screw assembly Fast CoolMOS power MOSFET - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness Enhanced total power density q MOSFET Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 TJ = 25°C TJ = 125°C 0.5 50 25 70 3.5 5.5 ±100 V q VDSS IDSS RDS(on) VGS(th) IGSS VGS = 0 V, ID = 1 mA VDS = 0.8 ...