TC2571

www.DataSheet4U.com TC2571 REV.2_04/12/2004 1W Low-Cost Packaged PHEMT GaAs Power FETs FEATURES 1W Typical Output Power at 6 GHz 11dB Typical Power Gain at 6 GHz High Linearity: IP3 = 40 dBm Typical at 6 GHz High Power Added Efficiency: PAE ≥ 43 % for Class A Operation Suitable for High Reliability Application Breakdown Voltage: BVDGO ≥ 15 V Lg = 0.35 µm, Wg = 2.4 mm 100 % DC Tested Low Cost Ceramic Package PHOTO ENLARGEMENT DESCRIPTION The TC2571 is packaged the TC1501 Pseudomorphic High Electron Mobility Transistor (PHEMT) GaAs Power chip. The cu-based ceramic package that requires a surface-mount package is a low-cost and high performance package. All devices are 100% DC tested to assure consistent quality. Typical applications include high dynamic range power amplifier for commercial applications including Cellular/PCS systems, and military high performance power amplifier. ELECTRICAL SPECIFICATIONS (TA=25℃) Symbol P1dB G1dB IP3 PAE IDSS gm VP BVDGO Rth CONDITIONS Output Power at 1dB Gain Compression Point , f = 6GHz VDS = 8 V, IDS = 300 mA Power Gain at 1dB Gain Compression , f = 6GHz VDS = 8 V, IDS = 300 mA Intercept Point of the 3rd-order Intermodulation, f = 6GHz VDS = 8 V, IDS = 300 mA, *PSCL = 17 dBm Power Added Efficiency at 1dB Compression Power, f = 6GHz Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V Transconductance at VDS = 2 V, VGS = 0 V Pinch-off Voltage at VDS = 2 V, ID = 4.8 mA Drain-Gate Breakdown Voltage at IDGO =1.2 mA Therma...