SI9426DY

www.DataSheet4U.com Si9426DY Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.0135 @ VGS = 4.5 V 0.0160 @ VGS = 2.5 V ID (A) 10 9.3 D SO-8 S S S G 1 2 3 4 Top View S Ordering Information: Si9426DY Si9426DY-T1 (with Tape and Reel) N-Channel MOSFET 8 7 6 5 D D D D G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID IDM IS Symbol VDS VGS Limit 20 "8 10 8 30 2.3 2.5 1.6 - 55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70160 S-03950—Rev. E, 26-May-03 www.vishay.com Symbol RthJA Limit 50 Unit _C/W 1 Si9426DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain Source On-State Drain-Source On State Resistanceb Forward Transconductanceb Diode Forward Voltageb VGS(th) IGSS IDSS ID(on) rDS(on) DS( ) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "8 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 10 A VGS = 2.5 V, ID = 8 A VDS = 10 V, ID = 10 A IS ...