NTMD6N02R2

www.DataSheet4U.com NTMD6N02R2 Power MOSFET 6.0 Amps, 20 Volts N−Channel Enhancement Mode Dual SO−8 Package Features Ultra Low RDS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature Dual SO−8 Surface Mount Package Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified SO−8 Mounting Information Provided http://onsemi.com VDSS 20 V RDS(ON) TYP 35 mΩ @ VGS = 4.5 V ID MAX 6.0 A N−Channel D Applications DC−DC Converters Low Voltage Motor Control Power Management in Portable and Battery−Powered Products, for example, Computers, Printers, Cellular and Cordless Telephones and PCMCIA Cards MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 1.0 MW) Gate−to−Source Voltage − Continuous Thermal Resistance − Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 70°C Pulsed Drain Current (Note 4) Thermal Resistance − Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 70°C Pulsed Drain Current (Note 4) Thermal Resistance − Junction−to−Ambient (Note 3) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 70°C Pulsed Drain Current (Note 4) Symbol VDSS VDGR VGS RθJA PD ID ID IDM RθJA PD ID ID IDM RθJA PD ID ID IDM Value 20 20 "12 62.5 2.0 6.5 5.5 50 102 1.22 ...