IRG4ZH70UD

www.DataSheet4U.com PD - 9.1627A IRG4ZH70UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features q q Surface Mountable UltraFast CoPack IGBT C q q q q q UltraFast IGBT optimized for high switching frequencies IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft recovery antiparallel diodes for use in bridge configurations Low Gate Charge Low profile low inductance SMD-10 Package Separated control & Power-connections for easy paralleling Inherently good coplanarity Easy solder inspection and cleaning Highest power density and efficiency available HEXFRED Diodes optimized for performance with IGBTs. Minimized recovery characteristics IGBTs optimized for specific application conditions High input impedance requires low gate drive power Less noise and interference n-channel VCES = 1200V VCE(ON)typ = 2.23V G E(k) E @VGE = 15V, IC = 42A Benefits q q q q q SMD-10 Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Œ Clamped Inductive Load Current  Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Max. 1200 78 42 312 312 42 312 ± 20 350 140 -55 to + 150 Units V A V W °C Thermal Resistance Parameter ...