IRG4ZH50KD

www.DataSheet4U.com PD - 9.1680 IRG4ZH50KD Surface Mountable Short INSULATED GATE BIPOLAR TRANSISTOR WITH Circuit Rated UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE Features q High short circuit rating optimized for motor control, tsc = 10µs, VCC = 720V, TJ = 125°C, VGE = 15V n-channel C VCES = 1200V VCE(ON)typ = 2.79V q q q q q q q q q q IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft recovery antiparallel diodes for use in bridge configurations Combines low conduction losses with high switching speed Low profile low inductance SMD-10 Package Separated control & Power-connections for easy paralleling Good coplanarity Easy solder inspection and cleaning Highest power density and efficiency available HEXFRED Diodes optimized for performance with IGBTs. Minimized recovery characteristics High input impedance requires low gate drive power Less noise and interference G E(k) E @VGE = 15V, IC = 29A Benefits SMD-10 Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM tsc VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Œ Clamped Inductive Load Current  Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Max. 1200 54 29 108 108 16 108 10 ± 20 210 83 -5...