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IRF710A

Advanced Power MOSFET

Description

www.DataSheet4U.com $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V ♦ Low RDS(ON): 2.815Ω (Typ.) IRF710A BVDSS = 400 V RDS(on) = 3.6Ω ID = 2 A TO-220 1 2 3 1.Gate 2. Drain 3. Source ...

Fairchild Semiconductor

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