Advanced Power MOSFET
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Advanced Power MOSFET
FEATURES
! Logic-Level Gate Drive ! Avalanche Rugged Technology ! Rugged Gate...
Description
www.DataSheet4U.com
Advanced Power MOSFET
FEATURES
! Logic-Level Gate Drive ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage Current : 10 μA (Max.) @ VDS = 200V ! Lower RDS(ON) : 0.145Ω (Typ.)
IRLS640A
BVDSS = 200 V RDS(on) = 0.18 Ω ID = 9.8 A
TO-220F
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25℃) Continuous Drain Current (TC=100℃) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds
② ① ① ③ ①
Value 200 9.8 6.2 63 ±20 64 18 4.0 5 40 0.32 - 55 to +150
Units V A A V mJ A mJ V/ns W W/℃
℃ 300
Thermal Resistance
Symbol RθJC RθJA Characteristic Junction-to-Case Junction-to-Ambient Typ. --Max. 3.13 62.5 Units
o
C/W
Rev. A
IRLS640A
Electrical Characteristics (TC=25℃ unless otherwise specified)
Symbol BVDSS ΔBV/ΔTJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Sourc...
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