AOL1444

www.DataSheet4U.com AOL1444 N-Channel Enhancement Mode Field Effect Transistor General Description The AOL1444 uses advanced trench technology to provide excellent R DS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard Product AOL1444 is Pb-free (meets ROHS & Sony 259 specifications). AOL1444L is a Green Product ordering option. AOL1444 and AOL1444L are electrically identical. Features VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 4.3mΩ (VGS = 10V) RDS(ON) < 6.3mΩ (VGS = 4.5V) UIS Tested Rg,Ciss,Coss,Crss Tested D Ultra SO-8TM Top View D Fits SOIC8 footprint ! S Bottom tab connected to drain G G S Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Maximum Symbol 30 Drain-Source Voltage VDS Gate-Source Voltage VGS ±20 Continuous Drain B,G Current Pulsed Drain Current Continuous Drain G Current Avalanche Current C C Units V V A TC=25°C G B 85 ID IDM IDSM IAR 73 200 26 21 30 45 100 50 5 3 -55 to 175 Symbol RθJA RθJC Typ 19.6 48 1 Max 25 60 1.5 TC=100°C TA=25°C TA=70°C A A mJ W W °C Units °C/W °C/W °C/W Repetitive avalanche energy L=0.1mH EAR TC=25°C PD Power Dissipation B TC=100°C TA=25°C PDSM Power Dissipation A TA=70°C Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter t ≤ 10s Maximum Junction-to-AmbientA A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Case Alpha & Omega Semicon...