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AOL1428 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOL1428 uses adv...
www.DataSheet4U.com
AOL1428 N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AOL1428 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Standard Product AOL1428 is Pb-free (meets ROHS & Sony 259 specifications). AOL1428L is a Green Product ordering option. AOL1428 and AOL1428L are electrically identical.
Features
VDS (V) = 30V ID = 45A (VGS = 10V) RDS(ON) <9.5mΩ (VGS = 10V) RDS(ON) <16mΩ (VGS = 4.5V) UIS Tested Rg,Ciss,Coss,Crss Tested
Ultra SO-8TM Top View D
Fits SOIC8 footprint !
G
D
S
Bottom tab connected to drain G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B Pulsed Drain Current Continuous Drain Current H Avalanche Current C Repetitive avalanche energy L=0.3mH C TC=25°C Power Dissipation B Power Dissipation
A
Maximum 30 ±20 49 34 120 18 14 30 135 43 21 5 3 -55 to 175
Units V V A
TC=25°C TC=100°C TA=25°C TA=70°C IDSM IAR EAR PD PDSM TJ, TSTG ID IDM
A A mJ W W °C
TC=100°C TA=25°C TA=70°C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Case
Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC
Typ 19 45 2.5
Max 25 55 3.5
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1428
El...