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NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
ISSUE 2 MARCH 94
ZTX337C
C B
E
ABSOLUTE MAXIMUM RA...
www.DataSheet4U.com
NPN SILICON PLANAR MEDIUM POWER
TRANSISTOR
ISSUE 2 MARCH 94
ZTX337C
C B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Continuous Collector Current Power Dissipation Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IB IC Ptot Tj:Tstg 50 45 5
E-Line TO92 Compatible VALUE UNIT V V V mA mA mW °C
100 800 750 -55 to +175
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Turn On Voltage SYMBOL MIN. V(BR)CBO V(BR)CES V(BR)EBO ICBO VCE(sat) VBE(on) 250 170 200 12 50 45 5 100 0.7 1.2 630 MHz pF TYP. MAX. UNIT V V V nA V V CONDITIONS. IC=100µ A IC=100µ A IE=100µ A VCB=45V, IE=0 IC=500mA, IB=50mA* IC=300mA,VCE=1V* IC=100mA, VCE=1V* IC=300mA, VCE=1V* IC=10mA, VCE=5V f=50MHz VCB=10V, f=1MHz
Static Forward Current hFE Transfer Transition Frequency Output Capacitance fT Cobo
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3-163
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