www.DataSheet4U.com
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
TO-237 Plastic Pack...
www.DataSheet4U.com
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
TO-237 Plastic Package
CTN635, CTN637, CTN639 CTN636, CTN638, CTN640
CTN635, 637, 639
NPN SILICON PLANAR EPITAXIAL
TRANSISTORS CTN636, 638, 640
PNP SILICON PLANAR EPITAXIAL
TRANSISTORS
Complementary
Transistors in Plastic Package for Driver Stage of Audio Amplifier.
E B
C
1 = COLLECTOR 2 = BASE 3 = EMITTER
1 2 3
ABSOLUTE MAXIMUM RATINGS
Ratings
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current – Continuous Peak Base Current – Continuous Peak Power Dissipation @ Ta=25ºC Derate above 25°C Power Dissipation @ Tc=25ºC Derate above 25°C Operating And Storage Junction Temperature Range
Symbol C T N 6 3 5 C T N 6 3 7 C T N 6 3 9 CTN636 CTN638 CTN640
VCBO VCEO VEBO IC ICM IB IBM PD PD Tj ,Tstg 45 45 60 60 5 1 1.5 100 200 750 6 2.5 20 –55 to +150 100 80 -
Units
V V V A A mA mA mW mW/°C W mW/°C ºC
Continental Device India Limited
Data Sheet
Page 1 of 4
CTN635, CTN637, CTN639 CTN636, CTN638, CTN640
ELECTRICAL CHARACTERISTICS (Ta =25ºC unless otherwise specified)
Characteristic
Collector-Emitter Voltage IC=10mA, IB =0 Collector-Base Voltage IC=100µA, I E=0 Emitter-Base Voltage IE=10µA, IC=0 Collector Cutoff Current VCB =30V, IE =0 VCB =30V, IE =0, Ta=125°C Base Emitter On Voltage IC=500mA, V CE=2V Collector-Emitter (Sat) Voltage IC=500mA, IB =50mA D.C. Current Gain IC=5mA, VCE=2V IC=150mA, VCE=2V* IC=500mA, VCE=2V* DYNAMIC CHARACTERIST...