(S29CD016J / S29CL016J) Simultaneous Read/Write Flash Memory
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S29CD016J/S29CL016J Known Good Die
16 Megabit (512k x 32-Bit) CMOS 2.6 or 3.3 Volt-only Burst Mode,...
Description
www.DataSheet4U.com
S29CD016J/S29CL016J Known Good Die
16 Megabit (512k x 32-Bit) CMOS 2.6 or 3.3 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
Supplement (Advance Information)
General Description
The Spansion S29CD016J and S29CL016J devices are Floating Gate products fabricated in 110 nm process technology. These burst mode Flash devices are capable of performing simultaneous read and write operations with zero latency on two separate banks. These products can operate up to 56 MHz and use a single VCC of 2.5 V to 2.75 V (S29CD-J) or 3.0 V to 3.6 V (S29CL-J) that make them ideal for today’s demanding automotive applications.
Distinctive Characteristics
Single 2.6 V (S29CD-J) or 3.3 V (S29CL-J) for read/program/ erase 110 nm Floating Gate Technology Simultaneous Read/Write operation with zero latency X32 Data Bus Dual Boot Sector Configuration (top and bottom) Flexible Sector Architecture
– CD016J & CL016J: Eight 2K Double word, Thirty-two 16K Double word, and Eight 2K Double Word sectors
Cycling Endurance: 100,000 write cycles per sector (typical) Command set compatible with JECEC (42.4) standard Supports Common Flash Interface (CFI) Persistent and Password methods of Advanced Sector Protection Unlock Bypass program command to reduce programming time Write operation status bits indicate program and erase operation completion Hardware (WP#) protection of two outermost sectors in the large bank Ready/Busy (RY/BY#) output i...
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