AM29F800T

www.DataSheet4U.com PRELIMINARY Am29F800T/Am29F800B 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS s 5.0 V ± 10% for read and write operations — Minimizes system level power requirements s Compatible with JEDEC standards — Pinout and software compatible with single-power-supply flash — Superior inadvertent write protection s Package options — 44-pin SO — 48-pin TSOP s Minimum 100,000 write/erase cycles guaranteed s High performance — 70 ns maximum access time s Sector erase architecture — One 16 Kbyte, two 8 Kbytes, one 32 Kbyte, and fifteen 64 Kbytes — Any combination of sectors can be erased. Also supports full chip erase. s Sector protection — Hardware method that disables any combination of sectors from write or erase operations. Implemented using standard PROM programming equipment. s Embedded Erase Algorithm — Automatically pre-programs and erases the chip or any sector s Embedded Program Algorithm — Automatically programs and verifies data at specified address s Data Polling and Toggle Bit feature for detection of program or erase cycle completion s Ready/Busy output (RY/BY) — Hardware method for detection of program or erase cycle completion s Erase Suspend/Resume — Supports reading data from or programming data to a sector not being erased s Low power consumption — 20 mA typical active read current for Byte Mode — 28 mA typical active read current for Word Mode — 30 mA typical program/erase c...