TPCF8201

TPCF8201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPCF8201 Notebook PC Applications Portable Equipment Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) High forward transfer admittance: |Yfs| = 5.4 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) Enhancement-mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 μA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Single-device operation Drain power (Note 3a) dissipation (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation Drain power (Note 3a) dissipation (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) Single pulse avalanche energy (Note 4) Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg 20 V 20 V ±12 V 3 A 12 1.35 1.12 W 0.53 0.33 1.46 mJ 1.5 A 0.11 mJ 150 °C −55 to 150 °C JEDEC ― JEITA ― TOSHIBA 2-3U1B Weight: 0.011 g (typ.) Circuit Configuration 8 7 6 5 Note: For Notes 1 to 5, refer to the next page. 1 2 3 4 Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant ch...