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NIKO-SEM
N- & P-Channel Enhancement Mode Field Effect Transistor
P3503QVG
SOP-8 Lead-Free
PRODUC...
www.DataSheet4U.com
NIKO-SEM
N- & P-Channel Enhancement Mode Field Effect
Transistor
P3503QVG
SOP-8 Lead-Free
PRODUCT SUMMARY V(BR)DSS N-Channel P-Channel 30 -30 RDS(ON) 25m 35m ID 7A -6A G : GATE D : DRAIN S : SOURCE
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction & Storage Temperature Range
1
SYMBOL VDS VGS
N-Channel P-Channel 30 ±20 7 6 20 2 1.3 -55 to 150 -30 ±20 -6 -5 -20
UNITS V V
TC = 25 °C TC = 70 °C
ID IDM
A
TC = 25 °C TC = 70 °C
PD Tj, Tstg
W °C
THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient
1 2
SYMBOL RθJA
TYPICAL 48
MAXIMUM 62.5
UNITS °C / W
Pulse width limited by maximum junction temperature. Duty cycle ≤ 1%
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA VGS = 0V, ID = -250µA VDS = VGS, ID = 250µA VDS = VGS, ID = -250µA VDS = 0V, VGS = ±20V VDS = 0V, VGS = ±20V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 30 -30 1 -1 1.5 -1.5 2.5 -2.5 ±100 ±100 nA V MIN TYP MAX UNIT
Gate Threshold Voltage
VGS(th)
Gate-Body Leakage
IGSS
1
OCT-08-2004
NIKO-SEM
N- & P-Channel Enhancement Mode Field Effect
Transistor
VDS = 24V, VGS = 0V VDS = -24V, VGS = 0V
P3503QVG
SOP-8 Lead-Free
1 -1 10 -10 20 -20 25 44 18 28 19 10 37 60 25 35 S m A µA
N-Ch P-Ch
Zero Gate Voltage Drain Cu...