MA27V01

www.DataSheet4U.com Variable Capacitance Diodes MA27V01 Silicon epitaxial planar type Unit: mm For VCO ■ Features Good linearity and large capacitance-ratio in CD − VR relation Small series resistance rD SSS-Mini type package, allowing downsizing of equipment and automatic insertion through the taping package 0.27+0.05 –0.02 2 0.10+0.05 –0.02 1.00±0.05 1.40±0.05 1 0.60±0.05 5˚ ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Rating 6 125 −55 to +125 Unit V °C °C 0.15 min. 5˚ 0 to 0.01 1: Anode 2: Cathode SSSMini2-F1 Package Marking Symbol: 1 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Reverse current Diode capacitance Symbol IR CD(1V) CD(3V) Capacitance ratio Series resistance * Conditions VR = 6 V VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz CD = 9 pF, f = 470 MHz Min Typ Max 10 15.0 5.0 2.2 17.0 7.0 CD(1V) /CD(3V) rD 0.15 max. 0.52±0.03 0.15 min. Unit nA pF  1.0 Ω Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Absolute frequency of input and output is 470 MHz. 3. *: Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER Publication date: March 2004 SKD00054BED 1 MA27V01 IF  VF 120 25°C CD  VR 102 f = 1 MHz Ta = 25°C 1.045 f = 1 MHz CD  Ta 100 Diode capacitance CD (pF) Forward current IF (mA) 1.029 VR = 1 V CD (Ta) CD (Ta = 25°C) 80 10 60 Ta = 60°C 40 −40°C 1.013 3V 1 0.9...