FDP20N50

FDP20N50 / FDPF20N50 / FDPF20N50T — N-Channel UniFETTM MOSFET FDP20N50 / FDPF20N50 / FDPF20N50T N-Channel UniFETTM MOSFET 500 V, 20 A, 230 mΩ November 2013 Features RDS(on) = 200 mΩ (Typ.) @ VGS = 10 V, ID = 10 A Low Gate Charge (Typ. 45.6 nC) Low Crss (Typ. 27 pF) 100% Avalanche Tested Applications LCD/LED/PDP TV Lighting Uninterruptible Power Supply AC-DC Power Supply Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. D GDS TO-220 GDS TO-220F G Absolute Maximum Ratings TC = 25°C unless otherwise noted. S Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) FDP20N50 20 12.9 80 500 ±30 1110 20 25 4.5 FDPF20N50 / FDPF20N50T 20 * 12.9 * 80 * PD Power Dissipation (TC = 25°C) - Derate above 25°C TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for S...