FDD8796

FDD8796/FDU8796 N-Channel PowerTrench® MOSFET MPLEM ENTATION March 2015 FDD8796/FDU8796 N-Channel PowerTrench® MOSFET 25V, 35A, 5.7mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Application „ Vcore DC-DC for Desktop Computers and Servers „ VRM for Intermediate Bus Architecture Features „ Max rDS(on) = 5.7mΩ at VGS = 10V, ID = 35A „ Max rDS(on) = 8.0mΩ at VGS = 4.5V, ID = 35A „ Low gate charge: Qg(10) = 37nC(Typ), VGS = 10V „ Low gate resistance „ Avalanche rated and 100% tested AD FREE I LE „ RoHS Compliant D G D G DS I-PAK S G (TO-251AA) Short Lead I-PAK S MOSFET Maximum Ratings TC= 25°C unless otherwise noted Symbol Parameter VDS Drain to Source Voltage VGS Gate to Source Voltage Drain Current -Continuous (Package Limited) ID -Continuous (Die Limited) -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Operating and Storage Temperature Thermal Characteristics (Note 1) (Note 2) Ratings 25 ±20 35 98 305 91 88 -55 to 175 Units V V A mJ W °C RθJC Thermal Resistance, Junction to Case TO_252, TO_251 1.7 RθJA Thermal Resistance, Junction to Ambient TO_252, TO_251 100 RθJA Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area 52 Package Marking and Ordering Information °C/...