AOD488

www.DataSheet4U.com AOD488 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD488 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOD488 is Pb-free (meets ROHS & Sony 259 specifications). AOD488L is a Green Product ordering option. AOD488 and AOD488L are electrically identical. TO-252 D-PAK Features VDS (V) = 40V (VGS = 10V) ID = 20 A RDS(ON) < 26 mΩ (VGS = 10V) RDS(ON) < 39 mΩ (VGS = 4.5V) D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C C Maximum 40 ±20 20 15 50 12 22 20 10 2 1.3 -55 to 175 Units V V A A mJ W W °C TC=25°C TC=100°C ID IDM IAR EAR PD PDSM TJ, TSTG TC=25°C Repetitive avalanche energy L=0.3mH C Power Dissipation Power Dissipation B TC=100°C TA=25°C TA=70°C A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 17.4 50 4 Max 30 60 7.5 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AOD488 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=10mA, VGS=0V VDS=32V, VGS=0V TJ=55°C VDS...