DatasheetsPDF.com

AOD456 Dataheets PDF



Part Number AOD456
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description N-Channel MOSFET
Datasheet AOD456 DatasheetAOD456 Datasheet (PDF)

www.DataSheet4U.com AOD456 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD456 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOD456 is Pb-free (meets ROHS & Sony 259 specifications). AOD456L is a Green Product ordering option. AOD456 and AOD456L are electrically identical. TO-252 D-PAK Features VDS (V) = 25V ID =.

  AOD456   AOD456


Document
www.DataSheet4U.com AOD456 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD456 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOD456 is Pb-free (meets ROHS & Sony 259 specifications). AOD456L is a Green Product ordering option. AOD456 and AOD456L are electrically identical. TO-252 D-PAK Features VDS (V) = 25V ID = 50A (VGS = 10V) RDS(ON) <6 mΩ (VGS = 10V) RDS(ON) <10 mΩ (VGS = 4.5V) 193 18 D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Maximum 25 ±20 50 50 150 30 45 50 25 3 2.1 -55 to 175 Units V V A A mJ W W °C TC=25°C TC=100°C ID IDM IAR EAR PD PDSM TJ, TSTG TC=25°C Repetitive avalanche energy L=0.1mH Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 15 41 2.1 Max 20 50 3 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AOD456 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250uA, VGS=0V VDS=20V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, VDS=5V VGS=10V, ID=30A TJ=125°C VGS=4.5V, ID=20A gFS VSD IS Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current 1 100 5 7.3 8 45 0.74 1 50 1850 VGS=0V, VDS=12.5V, f=1MHz VGS=0V, VDS=0V, f=1MHz 472 275 0.86 31.7 VGS=10V, VDS=12.5V, ID=20A 15.7 5.8 8.2 7.5 VGS=10V, VDS=12.5V, RL=0.625Ω, RGEN=3Ω IF=20A, dI/dt=100A/µs 14 30 11.5 30.9 20.3 37 1.5 38 19 2220 10 S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC 6 mΩ 1.74 Min 25 1 5 100 3 Typ Max Units V µA nA V A STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev3: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOD456 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 80 4.5V ID (A) 60 40 20 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics VGS=3.5 ID(A) 4.0V 6V 5V 10V 60 50 40 30 20 10 0 1 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics 125°C 25°C VDS=5V 4.63 494 692 593 830 10 Normalized On-Resistance 1.8 1.6 193 18 8 RDS(ON) (mΩ) VGS=4.5V 6 VGS=10V VGS=10V, 20A 1.4 1.2 1 0.8 0 25 50 75 4 VGS=4.5V, 20A 2 0 10 20 30 40 50 60 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Temperature (°C) Figure 4: On-Resistance vs. J.


AOD454Y AOD456 AOD458


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)