AOD444

www.DataSheet4U.com June 2004 AOD444, AOD444L (Green Product) N-Channel Enhancement Mode Field Effect Transistor General Description The AOD444 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. AOD444L (Green Product) is offered in a lead-free package. Features VDS (V) = 60V ID = 12 A RDS(ON) < 60 mΩ (VGS = 10V) RDS(ON) < 85 mΩ (VGS = 4.5V) TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Maximum 60 ±20 12 12 30 12 23 20 10 2 1.3 -55 to 175 Units V V A A mJ W W °C TC=25°C TC=100°C ID IDM IAR EAR PD PDSM TJ, TSTG TC=25°C Repetitive avalanche energy L=0.1mH Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 17.4 50 4 Max 30 60 7.5 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AOD444, AOD444L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=10mA, VGS=0V VDS=48V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, VDS=5V VGS=10V, ID=12A RDS(ON) gF...